Measurements of electric-field-induced energy-level shifts in GaAs single-quantum-wells using electroreflectance

Solid State Communications

Volumn 53, Issue 5, 1985, Pages 457-460

  Alibert, C ^a   Gaillard, S ^a   Brum, J A ^b   Bastard, G ^b   Frijlink, P ^c   Erman, M ^c  

^a CNRS   (France)

^b ECOLE NORMALE SUPÉRIEURE   (France)

^c PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - ELECTRON STATES; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS; SPECTROSCOPY;

ELECTROREFLECTANCE; QUANTUM WELLS; SCHOTTKY BARRIERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0022013931     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(85)91056-7     Document Type: Article

References (15)

1. Electroréflexion et ellipsométrie spectroscopique d'hétérostructures InGaAsP/InP et GaAlAs/GaAs