-
1
-
-
0025249563
-
Frequency-tunable semiconductor lasers
-
S. Murata and I. Mito, “Frequency-tunable semiconductor lasers,” Optical & quantum electron, vol. 22, pp. 1–15, 1990.
-
(1990)
Optical & quantum electron
, vol.22
, pp. 1-15
-
-
Murata, S.1
Mito, I.2
-
2
-
-
0001648775
-
Wavelength-selective voltage-tunable tunable photodetector made from multiple quantum wells
-
T. H. Wood, C. A. Burrus, A. H. Gnauck, J. M. Wiesenfeld, D. A. B. Muller, D. S. Chemla, and T. C. Damen, “Wavelength-selective voltage-tunable tunable photodetector made from multiple quantum wells,” Appl. Phys. Lett., vol. 47, no. 3, pp. 190–191, 1985.
-
(1985)
Appl. Phys. Lett.
, vol.47
, Issue.3
, pp. 190-191
-
-
Wood, T.H.1
Burrus, C.A.2
Gnauck, A.H.3
Wiesenfeld, J.M.4
Muller, D.A.B.5
Chemla, D.S.6
Damen, T.C.7
-
3
-
-
0344887395
-
High-speed dual-wavelength demultiplexing and detection in a monolithic superlattice p-i-n waveguide detector array
-
A. Larsson, P. A. Andrekson, P. Anderson, and S. T. Eng, “High-speed dual-wavelength demultiplexing and detection in a monolithic superlattice p-i-n waveguide detector array,” Appl. Phys. Lett., vol. 49, no. 5, pp. 233–235, 1986.
-
(1986)
Appl. Phys. Lett.
, vol.49
, Issue.5
, pp. 233-235
-
-
Larsson, A.1
Andrekson, P.A.2
Anderson, P.3
Eng, S.T.4
-
4
-
-
0024015452
-
Tunable superlattice lattice p-i-n photodetectors: Characteristics, theory, and applications
-
A. Larsson, P. A. Andrekson, S. T. Eng, and A. Yariv, “Tunable superlattice lattice p-i-n photodetectors: Characteristics, theory, and applications,” IEEE J. Quantum Electron., vol. 24, no. 5, pp. 787–801, 1988.
-
(1988)
IEEE J. Quantum Electron.
, vol.24
, Issue.5
, pp. 787-801
-
-
Larsson, A.1
Andrekson, P.A.2
Eng, S.T.3
Yariv, A.4
-
5
-
-
0141803062
-
Electrically tunable Fabry-Perot mirror using multiple quantum well index modulation
-
R. J. Simes, R. H. Yan, R. S. Geels, L. A. Coldren, J. H. English, A. C. Gossard, and D. G. Lishan, “Electrically tunable Fabry-Perot mirror using multiple quantum well index modulation,” Appl. Phys. Lett., vol. 53, no. 8, pp. 637–639, 1988.
-
(1988)
Appl. Phys. Lett.
, vol.53
, Issue.8
, pp. 637-639
-
-
Simes, R.J.1
Yan, R.H.2
Geels, R.S.3
Coldren, L.A.4
English, J.H.5
Gossard, A.C.6
Lishan, D.G.7
-
6
-
-
0024607471
-
Investigation of etalon effects in AlGaAs multiple quantum well modulators
-
M. Whitehead, G. Parry, and P. Wheatley, “Investigation of etalon effects in AlGaAs multiple quantum well modulators,” IEE Proc. vol. 136, pt. J, no. I, pp. 52–58, 1989.
-
(1989)
IEE Proc
, vol.136
, Issue.1
, pp. 52-58
-
-
Whitehead, M.1
Parry, G.2
Wheatley, P.3
-
7
-
-
0024641310
-
High-contrast reflection modulation at normal incidence in asymmetric multiple quantum well Fabry-Perot structure
-
M. Whitehead and G. Parry, “High-contrast reflection modulation at normal incidence in asymmetric multiple quantum well Fabry-Perot structure,” Electron. Lett., vol. 27, no. 9, 1989.
-
(1989)
Electron. Lett.
, vol.27
, Issue.9
-
-
Whitehead, M.1
Parry, G.2
-
8
-
-
0024768972
-
Analysis and design of surface-normal Fabry-Perot electrooptic modulators
-
R. H. Yan, R. J. Simes, and L. A. Coldren, “Analysis and design of surface-normal Fabry-Perot electrooptic modulators,” IEEE J. Quantum. Electron., vol. 25, no. 11, pp. 2272–2280, 1989.
-
(1989)
IEEE J. Quantum. Electron.
, vol.25
, Issue.11
, pp. 2272-2280
-
-
Yan, R.H.1
Simes, R.J.2
Coldren, L.A.3
-
9
-
-
0344453135
-
Transverse modulators with a record reflection change of >20%/V using asymmetric Fabry-Perot structures
-
R. H. Yan, R. J. Simes, L. A. Coldren, and A. C. Gossard, “Transverse modulators with a record reflection change of >20%/V using asymmetric Fabry-Perot structures,” Appl. Phys. Lett., vol. 56, no. 17, pp. 1626–1628, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.56
, Issue.17
, pp. 1626-1628
-
-
Yan, R.H.1
Simes, R.J.2
Coldren, L.A.3
Gossard, A.C.4
-
10
-
-
0012165572
-
Effect of temperature on the operating characteristics of asymmetric Fabry-Perot reflection modulators
-
R. H. Yan and L. A. Coldren, “Effect of temperature on the operating characteristics of asymmetric Fabry-Perot reflection modulators,” Appl. Phys. Lett., vol. 57, no. 3, pp. 267–269, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.57
, Issue.3
, pp. 267-269
-
-
Yan, R.H.1
Coldren, L.A.2
-
11
-
-
0025493831
-
Very low voltage, normally off asymmetric Fabry-Perot reflection modulator
-
M. Whitehead, A. Rivers, and G. Parry, “Very low voltage, normally off asymmetric Fabry-Perot reflection modulator,” Elect. Lett., vol. 26, no. 19, pp. 1588–1589, 1990.
-
(1990)
Elect. Lett.
, vol.26
, Issue.19
, pp. 1588-1589
-
-
Whitehead, M.1
Rivers, A.2
Parry, G.3
-
12
-
-
0025701931
-
Low voltage strained layer asymmetric Fabry-Perot reflection modulator
-
J. Woodhead, P. A. Claxton, P. Grey, T. E. Sale, J. P. R. David, L. Liu, M. A. Pate, G. Hill, and P. N. Robson, “Low voltage strained layer asymmetric Fabry-Perot reflection modulator,” Elect. Lett., vol. 27, no. 8, pp. 2117–2118, 1990.
-
(1990)
Elect. Lett.
, vol.27
, Issue.8
, pp. 2117-2118
-
-
Woodhead, J.1
Claxton, P.A.2
Grey, P.3
Sale, T.E.4
David, J.P.R.5
Liu, L.6
Pate, M.A.7
Hill, G.8
Robson, P.N.9
-
13
-
-
0026136397
-
Optical switching in an asymmetric Fabry-Perot etalon with high contrast ratio and very low insertion loss
-
J. F. Heffernan, M. H. Moloney, J. Hegarty, and J. S. Roberts, “Optical switching in an asymmetric Fabry-Perot etalon with high contrast ratio and very low insertion loss,” Elect. Lett., vol. 27, no. 8, pp. 659–660, 1991.
-
(1991)
Elect. Lett.
, vol.27
, Issue.8
, pp. 659-660
-
-
Heffernan, J.F.1
Moloney, M.H.2
Hegarty, J.3
Roberts, J.S.4
-
14
-
-
0007482683
-
Novel reflectance modulator employing an InGaAs/AlGaAs strained-layer superlattice Fabry-Perot cavity with unstrained InGaAs/InAlAs mirrors
-
I. J. Fritz, D. R. Myers, G. A. Vawter, T. M. Brennan, and B. E. Hammons, “Novel reflectance modulator employing an InGaAs/AlGaAs strained-layer superlattice Fabry-Perot cavity with unstrained InGaAs/InAlAs mirrors,” Appl. Phys. Lett., vol. 58, no. 15, pp. 1608–1610, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.58
, Issue.15
, pp. 1608-1610
-
-
Fritz, I.J.1
Myers, D.R.2
Vawter, G.A.3
Brennan, T.M.4
Hammons, B.E.5
-
15
-
-
0344576145
-
Electro-absorption and refraction in Fabry-Perot quantum well modulators: A general discussion
-
G. D. Boyd and G. Livescu, “Electro-absorption and refraction in Fabry-Perot quantum well modulators: A general discussion,” Optical and Quantum Electron., vol. 24, pp. S147-S165, 1992.
-
(1992)
Optical and Quantum Electron.
, vol.24
, pp. S147-S165
-
-
Boyd, G.D.1
Livescu, G.2
-
16
-
-
34249843346
-
Asymmetric Fabry-Perot modulators with an InGaAs/AlGaAs active region
-
L. Buydens, P. Demeester, and P. Van Daele. “Asymmetric Fabry-Perot modulators with an InGaAs/AlGaAs active region,” Optical and Quantum. Electron., vol. 24, pp. S167-S175, 1992.
-
(1992)
Optical and Quantum. Electron.
, vol.24
, pp. S167-S175
-
-
Buydens, L.1
Demeester, P.2
Van Daele, P.3
-
17
-
-
0024019013
-
Multiple quantum well (MQW) waveguide modulators
-
T. H. Wood, “Multiple quantum well (MQW) waveguide modulators,” IEEE J. Lightwave Technol., vol. 6, no. 6, pp. 743–757, 1988.
-
(1988)
IEEE J. Lightwave Technol.
, vol.6
, Issue.6
, pp. 743-757
-
-
Wood, T.H.1
-
18
-
-
21344445537
-
Band-edge electroabsorption in quantum well structures: The quantum-confined Stark effect
-
D. A. B. Miller, D. S. Chemla, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined Stark effect,” Phys. Rev. Lett., vol. 53, no. 22, pp. 2173–2176, 1984.
-
(1984)
Phys. Rev. Lett.
, vol.53
, Issue.22
, pp. 2173-2176
-
-
Miller, D.A.B.1
Chemla, D.S.2
Gossard, A.C.3
Wiegmann, W.4
Wood, T.H.5
Burrus, C.A.6
-
19
-
-
33646657680
-
Electric field dependence of optical absorption near the band gap of quantum-well structures
-
D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum-well structures,” Phys. Rev. B, vol. 32, no. 2, pp. 1043–1060, 1985.
-
(1985)
Phys. Rev. B
, vol.32
, Issue.2
, pp. 1043-1060
-
-
Miller, D.A.B.1
Chemla, D.S.2
Damen, T.C.3
Gossard, A.C.4
Wiegmann, W.5
Wood, T.H.6
Burrus, C.A.7
-
20
-
-
0001381523
-
Electrical-field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rules
-
D. A. B. Miller, M. J. Weiner, and D. S. Chemla, “Electrical-field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rules,” IEEE J. Quantum Electron., vol. 22, no. 9, pp. 1816–1830, 1986.
-
(1986)
IEEE J. Quantum Electron.
, vol.22
, Issue.9
, pp. 1816-1830
-
-
Miller, D.A.B.1
Weiner, M.J.2
Chemla, D.S.3
-
21
-
-
0023669846
-
Field effects on the refractive index and absorption coefficient in AlGaAs quantum well structures and their feasibility for electrooptic device applications
-
Y. Kan, H. Nagai, M. Yamanishi, and I. Suemune, “Field effects on the refractive index and absorption coefficient in AlGaAs quantum well structures and their feasibility for electrooptic device applications,” IEEE J. Quantum Electron., vol. 23, no. 12, pp. 2167–2180, 1987.
-
(1987)
IEEE J. Quantum Electron.
, vol.23
, Issue.12
, pp. 2167-2180
-
-
Kan, Y.1
Nagai, H.2
Yamanishi, M.3
Suemune, I.4
-
22
-
-
84958514405
-
Electrorefraction in semiconductor quantum wells
-
J. E. Zucker, “Electrorefraction in semiconductor quantum wells,” SPIE vol. 994, pp. 142–147, 1988.
-
(1988)
SPIE
, vol.994
, pp. 142-147
-
-
Zucker, J.E.1
-
23
-
-
0000173143
-
Electro-optic phase modulation in GaAs/AlGaAs quantum well waveguides
-
J. E. Zucker, T. L. Hendrickson, and C. A. Burrus, “Electro-optic phase modulation in GaAs/AlGaAs quantum well waveguides,” Appl. Phys. Lett., vol. 52, pp. 845–847, 1988.
-
(1988)
Appl. Phys. Lett.
, vol.52
, pp. 845-847
-
-
Zucker, J.E.1
Hendrickson, T.L.2
Burrus, C.A.3
-
24
-
-
0041138484
-
Observation of large quadratic electro-optic effect in GaAs/AlGaAs multiple quantum wells
-
T. H. Wood, R. W. Tkach, and A. R. Chraplyvy, “Observation of large quadratic electro-optic effect in GaAs/AlGaAs multiple quantum wells,” Appl. Phys. Lett., vol. 50, no. 13, pp. 798–800, 1987.
-
(1987)
Appl. Phys. Lett.
, vol.50
, Issue.13
, pp. 798-800
-
-
Wood, T.H.1
Tkach, R.W.2
Chraplyvy, A.R.3
-
25
-
-
36549104172
-
Quadratic electrooptic optic effect due to the quantum-confined Stark effect in quantum wells
-
J. S. Weiner, D. A. B. Miller, and D. S. Chemla, “Quadratic electrooptic optic effect due to the quantum-confined Stark effect in quantum wells,” Appl. Phys. Lett., vol. 50, no. 13, pp. 842–845, 1987.
-
(1987)
Appl. Phys. Lett.
, vol.50
, Issue.13
, pp. 842-845
-
-
Weiner, J.S.1
Miller, D.A.B.2
Chemla, D.S.3
-
26
-
-
0024055190
-
Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition
-
H. C. Lee, A. Kost, M. Kawase, A. Hariz, and P. D. Dapkus, “Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition,” IEEE J. Quantum Electron., vol. 24, no. 8, pp. 1581–1592, 1988.
-
(1988)
IEEE J. Quantum Electron.
, vol.24
, Issue.8
, pp. 1581-1592
-
-
Lee, H.C.1
Kost, A.2
Kawase, M.3
Hariz, A.4
Dapkus, P.D.5
-
27
-
-
0005294051
-
Resonant cavity enhanced AlGaAs/GaAs heterjunction photo-transistors with an intermediate InGaAs layer in the collector
-
M. S. Unlü, K. Kishino, J. I. Chyi, L. Arsenault, J. Reed, S. Noor Mohammad, and H. Morko\\\\\\\\c c, “Resonant cavity enhanced AlGaAs/GaAs heterjunction photo-transistors with an intermediate InGaAs layer in the collector,” Appl. Phys. Lett., vol. 57, no. 8, pp. 750–752, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.57
, Issue.8
, pp. 750-752
-
-
Unlü, M.S.1
Kishino, K.2
Chyi, J.I.3
Arsenault, L.4
Reed, J.5
Mohammad, S.N.6
Morkoc, H.7
-
28
-
-
0026202720
-
Resonant cavity-enhanced (RCE) photodetectors
-
K. Kishino, M. S. Unlu, J. I. Chyi, J. Reed, L. Arsenault, and H. Morko\\\\\\\\c C, “Resonant cavity-enhanced (RCE) photodetectors,” IEEE J. Quantum Electron. vol. 27, pp. 2025–2034, 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 2025-2034
-
-
Kishino, K.1
Unlu, M.S.2
Chyi, J.I.3
Reed, J.4
Arsenault, L.5
Morkoc, H.6
-
29
-
-
0001648485
-
A theoretical study of resonant cavity-enhanced photodector with Ge and Si active regions
-
M. S. Unl ü, K. Kishino, H. J. Liaw, and H. Morko\\\\\\\\c c, “A theoretical study of resonant cavity-enhanced photodector with Ge and Si active regions,” J. Appl. Phys., vol. 71, no. 8, pp. 4049–4058, 1992.
-
(1992)
J. Appl. Phys.
, vol.71
, Issue.8
, pp. 4049-4058
-
-
Unlü, M.S.1
Kishino, K.2
Liaw, H.J.3
Morkoc, H.4
-
30
-
-
0026139805
-
Low voltage high-gain resonant-cavity avalanche photodiode
-
R. Kuchibhotla, A. Srinvasan, J. C. Campbell, C. Lei, D. G. Deppe, Y. S. He, and B. G. Streetman, “Low voltage high-gain resonant-cavity avalanche photodiode,” IEEE Photon. Technol. Lett., vol. 3, no. 4, pp. 354–356, 1991.
-
(1991)
IEEE Photon. Technol. Lett.
, vol.3
, Issue.4
, pp. 354-356
-
-
Kuchibhotla, R.1
Srinvasan, A.2
Campbell, J.C.3
Lei, C.4
Deppe, D.G.5
He, Y.S.6
Streetman, B.G.7
-
31
-
-
0000949229
-
High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode
-
A. G. Dentai, R. Kuchibhotla, J. C. Campbell, C. Tsai, and C. Lei, “High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode,” Elect. Lett., vol. 27, no. 23, pp. 2125–2126, 1991.
-
(1991)
Elect. Lett.
, vol.27
, Issue.23
, pp. 2125-2126
-
-
Dentai, A.G.1
Kuchibhotla, R.2
Campbell, J.C.3
Tsai, C.4
Lei, C.5
-
32
-
-
0000530724
-
Multilayer reflection by molecular-beam expitaxy for resonance enhanced absorption in thin high-speed detector
-
A. Chin and T. Y. Chang, “Multilayer reflection by molecular-beam expitaxy for resonance enhanced absorption in thin high-speed detector,” J. Vac. Soc. Technol., vol. 88, no. 2, pp. 339–342, 1990.
-
(1990)
J. Vac. Soc. Technol.
, vol.88
, Issue.2
, pp. 339-342
-
-
Chin, A.1
Chang, T.Y.2
-
33
-
-
0026867948
-
Analysis of a resonant-cavity enhanced GaAs/AlGaAs MSM photodetector
-
Z. M. Li, D. Landheer, M. Veilleux, D. R. Conn, R. Surridge, J. M. Xu, and R. I. McDonald, “Analysis of a resonant-cavity enhanced GaAs/AlGaAs MSM photodetector,” IEEE Photon. Technol. Lett., vol. 4, no. 5, pp. 473–476, 1992.
-
(1992)
IEEE Photon. Technol. Lett.
, vol.4
, Issue.5
, pp. 473-476
-
-
Li, Z.M.1
Landheer, D.2
Veilleux, M.3
Conn, D.R.4
Surridge, R.5
Xu, J.M.6
McDonald, R.I.7
-
34
-
-
0041392184
-
Resonant-cavity InGaAs/InGaAs/InAlAs phototransistors with high gain for 1.3 - 1.6 µm
-
A. Dodabalapur and T. Y. Chang, “Resonant-cavity InGaAs/InGaAs/InAlAs phototransistors with high gain for 1.3 - 1.6 µm,” Appl. Phys. Lett., vol. 60, no. 8, pp. 929–931, 1992.
-
(1992)
Appl. Phys. Lett.
, vol.60
, Issue.8
, pp. 929-931
-
-
Dodabalapur, A.1
Chang, T.Y.2
-
35
-
-
3843113278
-
High quantum efficiency strained InGaAs/AlGaAs quantum-well resonant-cavity cavity inversion channel bipolar field-effect phototransistor
-
S. Daryanani, G. W. Taylor, P. Cooke, P. Evaldsson, and T. Vang, “High quantum efficiency strained InGaAs/AlGaAs quantum-well resonant-cavity cavity inversion channel bipolar field-effect phototransistor,” Appl. Phys. Lett., vol. 59, no. 26, pp. 3464–3466, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, Issue.26
, pp. 3464-3466
-
-
Daryanani, S.1
Taylor, G.W.2
Cooke, P.3
Evaldsson, P.4
Vang, T.5
-
36
-
-
0343599007
-
Optoelectronic resonant cavity technology based on inversion channel devices
-
P. Evaldsson, S. Daryanani, P. Cooke, and G. W. Taylor, “Optoelectronic resonant cavity technology based on inversion channel devices,” Optical and Quantum Electron., vol. 24, pp. S133-S146, 1992.
-
(1992)
Optical and Quantum Electron.
, vol.24
, pp. S133-S146
-
-
Evaldsson, P.1
Daryanani, S.2
Cooke, P.3
Taylor, G.W.4
-
37
-
-
0026121018
-
Enhancement of quantum efficiency in thin photodiodes through absorptive resonance
-
A. Chin and T. Y. Chang, “Enhancement of quantum efficiency in thin photodiodes through absorptive resonance,” IEEE J. Lightwave Technol., vol. 19, no. 3, pp. 321–328, 1991.
-
(1991)
IEEE J. Lightwave Technol.
, vol.19
, Issue.3
, pp. 321-328
-
-
Chin, A.1
Chang, T.Y.2
-
38
-
-
0006981442
-
Kramers-Krong relations in nonlinear optics
-
D. C. Hutchings, M. Sheik-Bahae, D. J. Hagan, and E. W. Van Stryland, “Kramers-Krong relations in nonlinear optics,” Opt. Quantum Electron., vol. 24, pp. 1–30, 1992.
-
(1992)
Opt. Quantum Electron.
, vol.24
, pp. 1-30
-
-
Hutchings, D.C.1
Sheik-Bahae, M.2
Hagan, D.J.3
Van Stryland, E.W.4
-
39
-
-
0026243083
-
Quantum well carrier sweep out: Relation to electroabsorption and exciton saturation
-
A. M. Fox, D. A. B. Miller, G. Livescu, J. E. Cunningham, and W. Y. Jan, “Quantum well carrier sweep out: Relation to electroabsorption and exciton saturation,” IEEE J. Quantum Electron., vol. 27, no. 10, pp. 2281–2295, 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, Issue.10
, pp. 2281-2295
-
-
Fox, A.M.1
Miller, D.A.B.2
Livescu, G.3
Cunningham, J.E.4
Jan, W.Y.5
-
40
-
-
0024770637
-
Impact of well coupling on the spontaneous emission properties of GaAs/AlGaAs Multiple Quantum well structures
-
M. Krahl, J. Christen, D. Bimberg, D. Mars, and J. Miller, “Impact of well coupling on the spontaneous emission properties of GaAs/AlGaAs Multiple Quantum well structures,” IEEE J. Quantum Electron., vol. 25, no. 11, pp. 2281–2288, 1989.
-
(1989)
IEEE J. Quantum Electron.
, vol.25
, Issue.11
, pp. 2281-2288
-
-
Krahl, M.1
Christen, J.2
Bimberg, D.3
Mars, D.4
Miller, J.5
-
41
-
-
0026123444
-
Field induced optical effects in coupled quantum wells
-
Y. C. Chen and K. Tada, “Field induced optical effects in coupled quantum wells,” IEEE J. Quantum Electron., vol. 27, no. 3, pp. 702–707, 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, Issue.3
, pp. 702-707
-
-
Chen, Y.C.1
Tada, K.2
-
42
-
-
0024755249
-
GaAs-AlGaAs multiquantum well reflection modulators grown on GaAs and silicon substrate
-
K. W. Goossen, G. D. Boyd, J. E. Cunningham, W. Y. Yan, D. A. B. Miller, D. S. Chemla, and R. M. Lum, “GaAs-AlGaAs multiquantum well reflection modulators grown on GaAs and silicon substrate,” IEEE Photon. Technol. Lett., vol. 1, no. 10, pp. 304–306, 1989.
-
(1989)
IEEE Photon. Technol. Lett.
, vol.1
, Issue.10
, pp. 304-306
-
-
Goossen, K.W.1
Boyd, G.D.2
Cunningham, J.E.3
Yan, W.Y.4
Miller, D.A.B.5
Chemla, D.S.6
Lum, R.M.7
-
43
-
-
34249835881
-
GaAs multiple quantum well microresonator modulators grown on silicon substrates
-
P. Barnes, K. Woodbridge, C. Roberts, A. A. Stride, A. Rivers, M. Whitehead, G. Parry, X. Zhang, A. Staton-Bevan, J. S. Roberts, and C. Button, “GaAs multiple quantum well microresonator modulators grown on silicon substrates,” Opt. Quantum Electron., vol. 24, pp. S177-S192, 1992.
-
(1992)
Opt. Quantum Electron.
, vol.24
, pp. S177-S192
-
-
Barnes, P.1
Woodbridge, K.2
Roberts, C.3
Stride, A.A.4
Rivers, A.5
Whitehead, M.6
Parry, G.7
Zhang, X.8
Staton-Bevan, A.9
Roberts, J.S.10
Button, C.11
-
44
-
-
0001577725
-
Theoretical and experimental studies of optical absorption in strained quantum-well structures for optical modulators
-
S. C. Hong, G. P. Kothiyal, N. Debbar, P. Bhattacharya, and J. Singh, “Theoretical and experimental studies of optical absorption in strained quantum-well structures for optical modulators,” Phys. Rev. B, vol. 37, no. 2, pp. 878–885, 1988.
-
(1988)
Phys. Rev. B
, vol.37
, Issue.2
, pp. 878-885
-
-
Hong, S.C.1
Kothiyal, G.P.2
Debbar, N.3
Bhattacharya, P.4
Singh, J.5
-
45
-
-
0026882046
-
Electroabsorption enhancement in tensile strained quantum wells via absorption edge merging
-
B. N. Gomatam and N. G. Anderson, “Electroabsorption enhancement in tensile strained quantum wells via absorption edge merging,” IEEE J. Quantum Electron., vol. 28, no. 6, pp. 1496–1507, 1992.
-
(1992)
IEEE J. Quantum Electron.
, vol.28
, Issue.6
, pp. 1496-1507
-
-
Gomatam, B.N.1
Anderson, N.G.2
-
47
-
-
0026818393
-
Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors
-
D. I. Babic and S. W. Corzine, “Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors,” IEEE J, Quantum Electron., vol. 28, no. 2, pp. 514–524, 1992.
-
(1992)
IEEE J, Quantum Electron.
, vol.28
, Issue.2
, pp. 514-524
-
-
Babic, D.I.1
Corzine, S.W.2
-
48
-
-
0024683236
-
Design of Fabry-Perot surface-emitting lasers with a periodic gain structure
-
S. W. Corzine, R. S. Geels, J. W. Scott, R. H. Yan, and L. A. Coldren, “Design of Fabry-Perot surface-emitting lasers with a periodic gain structure,” IEEE J. Quantum Electron., vol. 25, no. 6, pp. 1513–1524, 1989.
-
(1989)
IEEE J. Quantum Electron.
, vol.25
, Issue.6
, pp. 1513-1524
-
-
Corzine, S.W.1
Geels, R.S.2
Scott, J.W.3
Yan, R.H.4
Coldren, L.A.5
-
49
-
-
0024681032
-
Resonant periodic gain surface-emitting semiconductor lasers
-
M. Raja, S. Breueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Bernnan, and B. G. Hammons, “Resonant periodic gain surface-emitting semiconductor lasers,” IEEE J. Quantum Electron., vol. 25, no. 6, pp. 1500–1512, 1989.
-
(1989)
IEEE J. Quantum Electron.
, vol.25
, Issue.6
, pp. 1500-1512
-
-
Raja, M.1
Breueck, S.2
Osinski, M.3
Schaus, C.F.4
McInerney, J.G.5
Bernnan, T.M.6
Hammons, B.G.7
-
50
-
-
0026172831
-
Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization
-
J. L. Jewell, J. P. Harbison, A. Scherer, Y. H. Lee, and L. T. Florez, “Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization,” IEEE J. Quantum Electron., vol. 27, no. 6, pp. 1332–1346, 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, Issue.6
, pp. 1332-1346
-
-
Jewell, J.L.1
Harbison, J.P.2
Scherer, A.3
Lee, Y.H.4
Florez, L.T.5
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