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Journal of Applied Physics

Volumn 61, Issue 10, 1987, Pages 4869-4876

Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2-4-μm optoelectronic device applications

(1) Adachi, Sadao a

a NTT CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000583201 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.338352 Document Type: Article

Times cited : (390)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.