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Volumn 44, Issue 1, 1984, Pages 16-18

High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT - MODULATORS; SEMICONDUCTOR DIODES;

EID: 0021204987     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.94586     Document Type: Article
Times cited : (341)

References (9)
  • 2
    • 84951344624 scopus 로고    scopus 로고
    • Additional measurements with the field in the plane of the layers using improved contact structures show strong exciton broadening at lower fields than in the present Some of the shifts reported in Ref. 1 are now ascribed to remnant field perpendicular to the layers and thermal effects. These measurements will be reported in detail elsewhere
    • p-i-n configuration but with less shift of the resonances


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.