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1
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0008819070
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Room-temperature saturation characteristics of GaAs/ GaAIAs multiple quantum well structures and of the bulk GaAs
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D. A. B. Miller, U. S. Chemla, P. W. Smith, A. C. Gossard, and W. T. Tsang, “Room-temperature saturation characteristics of GaAs/ GaAIAs multiple quantum well structures and of the bulk GaAs,” Appl. Phys., vol. B28, pp. 96–97, 1982.
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(1982)
Appl. Phys.
, vol.B28
, pp. 96-97
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Miller, D.A.B.1
Chemla, U.S.2
Smith, P.W.3
Gossard, A.C.4
Tsang, W.T.5
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2
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36749114097
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Large room-temperature optical nonlinearity in GaAs/Ga1-xAlxAs multiple quantum well structures
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D. A. B. Miller, D. S. Chemla, D. J. Eilenberger, P. W. Smith, A. C. Gossard, and W. T. Tsang, “Large room-temperature optical nonlinearity in GaAs/Ga 1-x Al x As multiple quantum well structures,” Appl. Phys. Lett., vol. 41, pp. 679–681, 1982.
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(1982)
Appl Phys. Lett.
, vol.41
, pp. 679-681
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Miller, D.A.B.1
Chemla, D.S.2
Eilenberger, D.J.3
Smith, P.W.4
Gossard, A.C.5
Tsang, W.T.6
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3
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0039874864
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Exciton associated optical absorption spectra of AlAs/GaAs superlattices at 300 K
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Japan
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T. Ishibashi, S. Tarucha, and H. Okamoto, “Exciton associated optical absorption spectra of AlAs/GaAs superlattices at 300 K,” in proc. Symp. GaAs Related Compounds, Inst. Phys. Conf., Japan, l981, pp. 587–588.
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(1981)
proc. Symp. GaAs Related Compounds, Inst. Phys. Conf.
, pp. 587-588
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Ishibashi, T.1
Tarucha, S.2
Okamoto, H.3
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4
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0005078792
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Absorption measurements at high pressure on AlAs-AlxGa1-xAs-GaAs superlattices.
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S. W. Kirchoefer, N. Holonyak, K. Hess, D. A. Gulino, H. G. Drickamer, J. J. Coleman and P. D. Dapkus, “Absorption measurements at high pressure on AlAs-Al x Ga 1-x As-GaAs superlattices.” Appl. Phys. Lett. Vol. 40, pp. 821–824, 1982.
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Appl. Phys. Lett.
, vol.40
, pp. 821-824
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Kirchoefer, S.W.1
Holonyak, N.2
Hess, K.3
Gulino, D.A.4
Drickamer, H.G.5
Coleman, J.J.6
Dapkus, P.D.7
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5
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0021392307
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Room temperature excitonic nonlinear absorption and refraction in GaAs/A1GaAs multiple quantum well structures
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D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, and W. Wiegmann, “Room temperature excitonic nonlinear absorption and refraction in GaAs/A1GaAs multiple quantum well structures,” IEEE J, Quantum Electron., vol. QE-20, pp. 265–275, 1984.
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(1984)
IEEE J, Quantum Electron.
, vol.QE-20
, pp. 265-275
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Chemla, D.S.1
Miller, D.A.B.2
Smith, P.W.3
Gossard, A.C.4
Wiegmann, W.5
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6
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84975622239
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Room-temperature excitonic nonlinear-optical effects in semiconductor quantum well structures
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D. S. Chemla and D. A. B. Miller, “Room-temperature excitonic nonlinear-optical effects in semiconductor quantum well structures,” J. Opt. Soc. Amer., vol. B2, pp. 1155–1173, 1985.
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(1985)
J. Opt. Soc. Amer.
, vol.B2
, pp. 1155-1173
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Chemla, D.S.1
Miller, D.A.B.2
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7
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0021204987
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High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure
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T. H. Wood, C. A. Burrus, D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, and W. Wiegmann, “High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure,” Appl. Phys. Lett., vol. 44, pp. 16-18, 1984.
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(1984)
Appl Phys. Lett.
, vol.44
, pp. 16-18
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Wood, T.H.1
Burrus, C.A.2
Miller, D.A.B.3
Chemla, D.S.4
Damen, T.C.5
Gossard, A.C.6
Wiegmann, W.7
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8
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21344445537
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Bandedge electro-absorption in quantum well structures: The quantum confined Stark effect
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D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Bandedge electro-absorption in quantum well structures: The quantum confined Stark effect,” Phys. Rev. Lett., vol. 53, pp. 2173–2177, 1984.
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(1984)
Phys. Rev. Lett.
, vol.53
, pp. 2173-2177
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Miller, D.A.B.1
Chemla, D.S.2
Damen, T.C.3
Gossard, A.C.4
Wiegmann, W.5
Wood, T.H.6
Burrus, C.A.7
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9
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33646657680
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Electric field dependence of optical absorption near the band-gap gap of quantum well structures
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——, “Electric field dependence of optical absorption near the band-gap gap of quantum well structures,” Phys. Rev., vol. B32, p. 1043, 1985.
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(1985)
Phys. Rev.
, vol.B32
, pp. 1043
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Miller, D.A.B.1
Chemla, D.S.2
Damen, T.C.3
Gossard, A.C.4
Wiegmann, W.5
Wood, T.H.6
Burrus, C.A.7
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10
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33748848767
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Electroabsorption in semiconductors: The excitonic absorption edge
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For a discussion of the Franz-Keldysh effect and the broadening of exciton resonances with field see
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For a discussion of the Franz-Keldysh effect and the broadening of exciton resonances with field see J. D. Dow and D. Redfield, “Electroabsorption in semiconductors: The excitonic absorption edge,” Phys. Rev., vol. B1, pp. 3358–3371, 1970.
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(1970)
Phys. Rev.
, vol.B1
, pp. 3358-3371
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Dow, J.D.1
Redfield, D.2
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11
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0022012724
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131 ps optical modulation in semiconductor multiple quantum wells
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T. H. Wood, C. A. Burrus, D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard and W. Wiegmann, “131 ps optical modulation in semiconductor multiple quantum wells.” IEEE J. Quantum Electron., vol. QE-21, pp. 117–118. 1985.
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(1985)
IEEE J. Quantum Electron.
, vol.21
, pp. 117-118
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Wood, T.H.1
Burrus, C.A.2
Miller, D.A.B.3
Chemla, D.S.4
Damen, T.C.5
Gossard, A.C.6
Wiegmann, W.7
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12
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0021461656
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Novel hybrid optically bistable switch: The quantum well self electrooptic effect device
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D. A. B. Miller, D. S. Chermla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Novel hybrid optically bistable switch: The quantum well self electrooptic effect device,” Appl. Phys. Lett., vol. 45, pp. 13–15, 1984.
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(1984)
Appl Phys. Lett.
, vol.45
, pp. 13-15
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Miller, D.A.B.1
Chermla, D.S.2
Damen, T.C.3
Gossard, A.C.4
Wiegmann, W.5
Wood, T.H.6
Burrus, C.A.7
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13
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0021719281
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Optical level shifter and self-linearized optical modulator using a quantum-well self-electrooptic effect device
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D. A. B. Miller, D. S. Chemla, T. C. Damen, T. H. Wood, C. A. Burrus, A. C. Gossard, and W. Wiegmann, “Optical level shifter and self-linearized optical modulator using a quantum-well self-electrooptic effect device,” Optics Lett., vol. 9, pp. 567–569, 1984.
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(1984)
Optics Lett.
, vol.9
, pp. 567-569
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Miller, D.A.B.1
Chemla, D.S.2
Damen, T.C.3
Wood, T.H.4
Burrus, C.A.5
Gossard, A.C.6
Wiegmann, W.7
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14
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84939702383
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-
Perhaps the closest precedent to the SEED devices is in the interesting work that has been performed on devices using the Franz-Keldysh effect in diodes [15]-[17]. One configuration utilizes the diode in a resonator; this has been considered both theoretically [15] and experimentally [16]. As in the SEED devices reported here, the modulator and photodiode are the same p-n junction. The Franz-Keldysh effect can however only usefully give an increase in absorption with increasing voltage; consequently, the mechanism of bistability from increasing absorption (with decreasing voltage) used in the SEED device (see Section III) is not available and instead a resonator is used as in conventional absorptive bistability to achieve bistability with decreasing absorption. The Franz-Keldysh bistability is therefore a hybrid implementation of conventional absorption bistability. Another configuration using the Franz-Nadysh effect, with an additional separate photodiode for detection and an external transistor to give the gain for bistability, has also recently been reported [17]. Because of the transistor, the cavity is not necessary, and, as in the SEED devices reported here. coherent light is no longer required.
-
Perhaps the closest precedent to the SEED devices is in the interesting work that has been performed on devices using the Franz-Keldysh effect in diodes [15]-[17]. One configuration utilizes the diode in a resonator; this has been considered both theoretically [15] and experimentally [16]. As in the SEED devices reported here, the modulator and photodiode are the same p-n junction. The Franz-Keldysh effect can however only usefully give an increase in absorption with increasing voltage; consequently, the mechanism of bistability from increasing absorption (with decreasing voltage) used in the SEED device (see Section III) is not available and instead a resonator is used as in conventional absorptive bistability to achieve bistability with decreasing absorption. The Franz-Keldysh bistability is therefore a hybrid implementation of conventional absorption bistability. Another configuration using the Franz-Nadysh effect, with an additional separate photodiode for detection and an external transistor to give the gain for bistability, has also recently been reported [17]. Because of the transistor, the cavity is not necessary, and, as in the SEED devices reported here. coherent light is no longer required.
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15
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0019586505
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Falling current-voltage characteristic and optical bistability of a resonator photocell in the Franz-Keldysh effect
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translation of Fiz. Tekh. Poluprovodn vol. 15, pp. 1380–1384, 1981.
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B, S. Ryvkin, “Falling current-voltage characteristic and optical bistability of a resonator photocell in the Franz-Keldysh effect,” Soy, Phys. Semicond., vol. 15, pp. 796–798, 1981 (translation of Fiz. Tekh. Poluprovodn vol. 15, pp. 1380–1384, 1981.
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(1981)
Soy, Phys. Semicond.
, vol.15
, pp. 796-798
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Ryvkin, B.S.1
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16
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84915244801
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Bistable optical characteristics of a resonator photocell with two-step optical transitions
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translation of Pis 'ma Zh, Fiz., vol. : 8, pp. 951–954, 1982).
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B. S. Ryvkin and M. N. Stepanova, “Bistable optical characteristics of a resonator photocell with two-step optical transitions,” Soy. Tech. Phys. Lett., vol. 8. pp. 413–414, 1982 (translation of Pis ‘ma Zh, Fiz., vol. 8, pp. 951–954, 1982).
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Soy. Tech. Phys. Lett.
, vol.8
, pp. 413-414
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Ryvkin, B.S.1
Stepanova, M.N.2
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17
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84939733051
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Optical bistability due to the Franz-Keldysh effect with incoherent unpolarized light
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1983 (translation of Pis'nla Zh. Tekh. Fiz., vol. 9, pp. 604–609
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M. I. Nemenov, B. S. Ryvkin, and M. N. Stepanova, “Optical bistability due to the Franz-Keldysh effect with incoherent unpolarized light,” Sov. Tech. Phys. Lett., vol. 9, pp. 260–262, 1983 (translation of Pis'nla Zh. Tekh. Fiz., vol. 9, pp. 604–609, 1983.
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Sov. Tech. Phys. Lett.
, vol.9
, pp. 260-262
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Nemenov, M.I.1
Ryvkin, B.S.2
Stepanova, M.N.3
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19
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35949034037
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Optical bistability through Nonlinear dispersion and absorption
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G. P. Agrawal and H. J. Carmichael. “Optical bistability through Nonlinear dispersion and absorption” Phys. Rev., vol. A19, pp. 2074–2086. 1979.
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Phys. Rev.
, vol.A19
, pp. 2074-2086
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Agrawal, G.P.1
Carmichael, H.J.2
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20
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0021601624
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Optical bistability and differential gain resulting from absorption increasing with excitation
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D. A. B. Miller, “Optical bistability and differential gain resulting from absorption increasing with excitation,” J. Opt. Soc. Amer., vol. B1, pp. 857–864, 1984.
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(1984)
J. Opt. Soc. Amer.
, vol.B1
, pp. 857-864
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Miller, D.A.B.1
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21
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0006903533
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Transient response of hybrid bistable optical devices
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E. Garmire, H. Marburger, S. D. Allen, and H. G. Winful, “Transient response of hybrid bistable optical devices,” Appl. Phys. Lett., vol. 34, pp. 374–376, 1979.
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Appl. Phys. Lett.
, vol.34
, pp. 374-376
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Garmire, E.1
Marburger, J.H.2
Allen, S.D.3
Winful, H.G.4
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22
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0020191668
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On the physical limits of digital optical switching and logic elements
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P. W. Smith, “On the physical limits of digital optical switching and logic elements,” Bell Syst. Tech. J., vol. 61, pp. 1975–1993, 1982.
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Bell Syst. Tech. J.
, vol.61
, pp. 1975-1993
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Smith, P.W.1
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23
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0021373189
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Use of a diode laser to observe room-temperature, low-power optical bistability in a GaAs-AlGaAs etalon
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S. S. Tarng, H. M. Gibbs, J. L. Jewell, N. Peyghambarian, A. C. Gossard. T. Venkatesan, and W. Wiegmann, ”Use of a diode laser to observe room-temperature, low-power optical bistability in a Ga A s -AlGaAs etalon,” Appl. Phys. Lett., vol. 44, pp. 360–361, 1984.
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Appl. Phys. Lett.
, vol.44
, pp. 360-361
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Tarng, S.S.1
Gibbs, H.M.2
Jewell, J.L.3
Peyghambarian, N.4
Gossard, A.C.5
Venkatesan, T.6
Wiegmann, W.7
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24
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0020704056
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Transient response in absorption bistabiiity
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D. E, Grant. and H. J. Kimble, “Transient response in absorption bistabiiity,” Optics Commun., vol. 44, pp. 415–420, 1983
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(1983)
Optics Commun.
, vol.44
, pp. 415-420
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Grant, D.E.1
Kimble, H.J.2
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