2.78 μm InGaAsSb/AlGaAsSb multiple quantum-well lasers with metastable InGaAsSb wells grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 150, Issue , 1995, Pages 1354-1357

  Lee, H ^a   York, P K ^a   Menna, R J ^a   Martinelli, R U ^a   Garbuzov, D ^a   Narayan, S Y ^a  

^a SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ALUMINUM GALLIUM ARSENIC ANTIMONIDE; INDIUM GALLIUM ARSENIC ANTIMONIDE; LASING WAVELENGTH;

SEMICONDUCTOR LASERS;

EID: 0029308467     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)80159-A     Document Type: Article

References (9)

1. Proc. 18th Int. Symp. GaAs and Related Compounds 1991
2. High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 /spl mu/m
3. Molecular-beam epitaxial growth of high-mobility n-GaSb