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1
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0021204987
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High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure
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T. H. Wood, C. A. Bumis, D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, and W. Wiegmann, “High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure,” Appl. Phys. Lett., vol. 44, pp. 16–18, 1984.
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2
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0022012724
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131 ps optical modulation in semiconductor multiple quantum wells (MQW's)
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—, “131 ps optical modulation in semiconductor multiple quantum wells (MQW's),” IEEE J. Quantum Electron., vol. QE-2J, pp. 117-118, 1985.
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Waveguidetype optical modulator of GaAs quantum well double heterestructures using electric field effect on exciton absorption
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S. Tarucha, H. Iwamura, T. Saku, and H. Okamoto, “Waveguide type optical modulator of GaAs quantum well double heterestructures using electric field effect on exciton absorption,” Japan. J. Appl. Phys., vol. 24, pp. L442-L444, 1985.
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0022112567
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100 ps waveguide multiple quantum well (MQW) optical modulator with 10:1 on/off ratio
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T. H. Wood, C. A. Burrus, R. S. Tucker, J. S. Weiner, D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, and W. Wiegman, “100 ps waveguide multiple quantum well (MQW) optical modulator with 10:1 on/off ratio,” Electron. Lett., vol. 21, pp. 693–694, 1985.
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5
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84941486206
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I Gbit/s transmission experiment over 101 km of single mode fiber using a 1.55 μ m ridge guide C 3 laser
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R. A. Linke, B. L. Kaspar, J. S. KO, 1. P. Kaminow, and R. S. Vodhanel, “I Gbit/s transmission experiment over 101 km of single mode fiber using a 1.55 μ m ridge guide C 3 laser,” Electron. Lett., vol. 19, pp. 776–777, 1983.
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6
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0000273077
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Measurement of the conduction-band discontinuity of molecular beam epitaxial grown ln0.52Al0.48As/In0.53Ga0.47As N-n heterojunction by C/V profiling
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R. People, K. W. Wecht, K. Alavi, and A. Y. Cho, “Measurement of the conduction-band discontinuity of molecular beam epitaxial grown ln 0.52 Al 0.48 As/In 0.53 Ga 0.47 As N-n heterojunction by C/V profiling,” Appl. Phys. Lett., vol. 43, pp. 118–120, 1983.
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0345858095
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1,5-1.6 μm Ga0.47ln 0.53As/Al0.48In0.52As multiquantum well lasers grown by MBE
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H. Temkin. K. Alavi, W. R. Wagner, T. P. Pearsall, and A. Y. Cho, “1,5-1.6 μ m Ga 0.47 ln 0.53 As/Al 0.48 In 0.52 As multiquantum well lasers grown by MBE,” Appl. Phys. Lett., vol. 42, pp. 845–847, 1983.
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8
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0021407924
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Calculation of the conduction band discontinuity for Ga0.47ln 0.53As/Al0.48In0.52As heterojunction
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D. F. Welch, G. W. Wicks, and L. F. Eastman, “Calculation of the conduction band discontinuity for Ga 0.47 ln 0.53 As/Al 0.48 In 0.52 As het erojunction,” J. Appl. Phys, vol. 55, pp. 3176–3179, 1984.
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84941434515
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MBE-grown InGaAs/ InAlAs MQW structures and InGaAs/InGaAlAs/lnAlAs/lnP SCH-MQW laser diodes
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Brazil, Aug.
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H. Asahi, Y. Kawamura, and K. Watika, “MBE-grown InGaAs/ InAlAs MQW structures and InGaAs/InGaAlAs/lnAlAs/lnP SCH-MQW laser diodes,” Abst. Papers, 9th IEEE Int. Semiconductor Laser Conf., Brazil, Aug. 1984, pp. 82–83.
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Abst. Papers, 9th IEEE Int. Semiconductor Laser Conf.
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Asahi, H.1
Kawamura, Y.2
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10
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0022046385
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Electroabsorption on room temperature excitons in InGaAs/InGaAlAs multiple quantum well structures
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K. Wakita, Y. Kawamura, Y. Yoshikuni, and H. Asahi, “Electroab sorption on room temperature excitons in InGaAs/InGaAlAs multiple quantum well structures,” Electron, Lett., vol. 21, pp. 338–339, 1985.
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Wakita, K.1
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11
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0000366086
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Room temperature excitons in 1.6 μm band-gap GalnAs/AlInAs quantum wells
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J. S. Weiner, D. S. Chemla, D. A. B. Miller, T. H. Wood, D. Sivco, and A. Y. Cho, “Room temperature excitons in 1.6 μm band-gap GalnAs/AlInAs quantum wells,” Appl. Phys. Lett., vol. 46, pp, 619– 621, 1985.
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Cho, A.Y.6
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12
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0022044073
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Heavy hole and light hole excitons in InGaAs/lnAlAs MQW structures at room temperature
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Y. Kawamura, K. Wakita, and H. Asahi, “Heavy hole and light hole excitons in InGaAs/lnAlAs MQW structures at room temperature,” Electron. Lett., vol. 21, pp. 371–373, 1985.
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Kawamura, Y.1
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High-speed long-wave length optical modulation in InGaAs/lnAlAs multiple quantum wells
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K. Wakita, Y. Kawamura, Y. Yoshikuni, H. Asahi, and S. Uehara, “High-speed long-wave length optical modulation in InGaAs/lnAlAs multiple quantum wells,” Electron. Lett., vol. 21, pp. 951–953, 1985.
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14
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0001051831
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Strong polarization-sensitive electroabsorption in GaAs/ AlGaAs quantum well waveguides
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After this paper was submitted to this journal, highly anisotropic electroabsorption in GaAs/AlGaAs quantum well waveguides was published. See
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After this paper was submitted to this journal, highly anisotropic electroabsorption in GaAs/AlGaAs quantum well waveguides was published. See J. S. Weiner, D. A. B. Miller, D. S. Chemla, T. C. Damen, C. A. Burrus, T. H. Wood, A. C. Gossard, and W. Wiegmann, “Strong polarization-sensitive electroabsorption in GaAs/ AlGaAs quantum well waveguides,” Appl. Phys. Lett., vol. 47, pp. 1148-1150, 1985.
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Wood, T.H.6
Gossard, A.C.7
Wiegmann, W.8
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0021392307
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Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures
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D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, and W. Wiegmann, “Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures,” IEEE J. Quantum Electron., vol QE-20, pp. 265–275, 1984.
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Y. Kawamura, K. Wakita, and H. Asahi, “Heavy hole and light hole excitons at high temperature in InGaAs/fnAlAs multiple quantum well structures,” presented at the 12th Int. Symp. GaAs and Related Compounds, Karuizawa, Japan, 1985, paper IV-8.
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36749114097
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D. A. B. Miller, D. S, Chemla, D. J. Eilenberger, and P. W. Smith, “Large room-temperature optical nonlinearity in GaAs/Ga 1-x A1, As multiple quantum well structures,” Appl. Phys. Lett., vol. 41, pp, 679–681, 1932.
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Optical characterization of interface disorder in GaAs-Ga1-x AIx As multiquantum well structures
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C. Weisbuch, R. Dingle, A. C. Gossard, and W. Weigmann, “Optical characterization of interface disorder in GaAs-Ga 1-x AI x As mul ti quantum well structures,” Solid State Commun., vol. 30, pp, 709-712, 1981.
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Electric field dependence of optical absorption near the bandgap of quantum well structures
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D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the bandgap of quantum well structures,” Phys. Rev., vol. B32, pp. 1043–1060, 1985.
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J. S. Weiner, D. S. Chemla, D. A. B. Miller, H. Haus, A. C. Gossard, W. Wiegmann, and C. A. Burrus, “Highly anisotropic optical properties of single quantum well waveguides,” Appl. Phys. Lett., vol. 47, pp. 664–667, 1985.
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Long wavelength optical modulation in multiple quantum wells
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Modulated Semiconductor Structures, Kyoto, Japan, paper 19-S; also, Surf. Sci., to be published.
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K. Wakita, Y. Kawamura, Y. Yoshikuni, and H. Asahi, “Long wavelength optical modulation in multiple quantum wells,” presented at the 2nd Int. Conf. Modulated Semiconductor Structures, Kyoto, Japan, 3985, paper 19-S; also, Surf. Sci., to be published.
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K. Mohammed, F. Cappaso, J. Allan, A. Y. Cho, and A. L. Hutchinson, “New high-speed long-wavelength Al 0.48 ln 0.52 As/ Ga 0.47 In 0 53 as multiquantum well avalanche photodiodes,” Appl. Phys. Lett., vol. 47, pp. 597–599, 1985.
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H. Temkin, M. B. Panish, and R. A. Logan,”Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy,” Appl. Phys. Lett., vol. 47, pp. 978–980, 1985.
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