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Applied Physics Letters

Volumn 49, Issue 3, 1986, Pages 135-136

Electroabsorption in an InGaAs/GaAs strained-layer multiple quantum well structure

(4) Van Eck, T E a Chu, P a Chang, W S C a Wieder, H H a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042157697 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.97202 Document Type: Article

Times cited : (74)

References (14)

1
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2
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3
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4
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5
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6
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- Preliminary measurements of electroabsorption in two InGaAs/GaAs multiple quantum well structures made at MIT Lincoln Laboratory have been communicated to the authors by, (to be published).
- Aull, B.¹ Goodhue, W.D.² Burke, B.E.³

7
- 0022136904
- (1985) IEEE Electron Device Lett. , vol.EDL‐6 , pp. 491
- Rosenberg, J.J.¹ Benlamri, M.² Kirchner, P.D.³ Woodall, J.M.⁴ Pettit, G.D.⁵

8
- 0023042985
- (1986) Appl. Phys. Lett. , vol.48 , pp. 56
- Hull, R.¹ Bean, J.C.² Cerdeira, F.³ Fiory, A.T.⁴ Gibson, J.M.⁵

9
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10
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11
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12
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13
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14
- 0020296889
- Equation (5) of Ref. 13 predicts that the strain splitting of the valence bands will be [formula omitted] The values of [formula omitted] and [formula omitted] for GaAs and In As are reported by, Using linear interpolation for [formula omitted] As, a strain splitting of 52 meV is predicted for the present structure.
- (1982) J. Appl. Phys. , vol.53 , pp. 8775
- Adachi, S.¹

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