Resonant cavity enhanced GaInAsSb-AlAsSb photodetector grown by MBE for mid-IR applications

IEEE Photonics Technology Letters

Volumn 8, Issue 5, 1996, Pages 667-669

  Xie, K ^a   Zhao, J H ^a   Shi, Y ^a   Lee, H ^a   Olsen, G ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CAVITY RESONATORS; GOLD COMPOUNDS; INTERFACES (MATERIALS); MIRRORS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

BRAGG REFLECTORS; MID INFRARED APPLICATIONS; PHOTORESPONSE; POST GROWTH SELECTIVITY; RESONANT CAVITY ENHANCED PHOTODETECTORS;

PHOTODETECTORS;

EID: 0030150745     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.491574     Document Type: Article

References (13)