High-Power GalnAsSb-AlGaAsSb Multiple-Quantum-Well Diode Lasers Emitting at 1.9 μm

IEEE Photonics Technology Letters

Volumn 6, Issue 1, 1994, Pages 7-9

  Choi, H K ^a   Turner, G W ^a   Eglash, S J ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS;

FUNCTION LASERS; HETEROSTRUCTURE; LASER DIODES; PHOTONICS;

SEMICONDUCTOR LASERS;

EID: 0027929130     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.265873     Document Type: Article

References (12)

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