Resonant cavity enhanced GaInAsSb photodetectors grown by MBE for room temperature operation at 2.35μm

Electronics Letters

Volumn 32, Issue 24, 1996, Pages 2268-2269

  Shi, Yan ^a   Zhao, Jian H ^a   Lee, Hao ^b   Sarathy, J ^c   Cohen, M ^c   Olsen, G ^c  

^a RUTGERS UNIVERSITY   (United States)

^b SARNOFF CORPORATION   (United States)

^c GOODRICH CORPORATION   (United States)

Author keywords

Integrated optoelectronics; Photodiodes; Semiconductor devices

Indexed keywords

CAVITY RESONATORS; CIRCUIT RESONANCE; INTEGRATED OPTOELECTRONICS; MOLECULAR BEAM EPITAXY; PHOTODIODES; QUANTUM EFFICIENCY; QUANTUM OPTICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

RESONANT WAVELENGTH;

PHOTODETECTORS;

EID: 0030287933     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961505     Document Type: Article

References (7)

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