Monte Carlo Study of GaAs/AlxGa1_x As Modfet’s: Effects of AlxGa1-x As Composition

IEEE Transactions on Electron Devices

Volumn 38, Issue 2, 1991, Pages 197-206

  Kizilyalli, Isik C ^a   Artaki, Michael ^b   Chandra, Amitabh ^b  

^a WRIGHT PATTERSON AIR FORCE BASE   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL STATISTICS--MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

DONOR RELATED DEEP LEVELS; ELECTRONIC TRANSPORT; MODFET; MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET); TRANSCONDUCTANCE; TRANSFER CHARACTERISTICS;

TRANSISTORS, FIELD EFFECT;

EID: 0026104726     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.69895     Document Type: Article

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