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Physical Review B

Volumn 33, Issue 8, 1986, Pages 5595-5606

Monte carlo study of electronic transport in Al1-xGaxAs/GaAs single-well heterostructures

(2) Yokoyama, Kiyoyuki a Hess, Karl a

a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001582597 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.33.5595 Document Type: Article

Times cited : (186)

References (42)

1
- 84926547399
- IBM Research Center, Internal Research
- (1969)
- Esaki, L.¹ Tsu, R.²

2
- 36749106768
- (1978) Appl. Phys. Lett. , vol.33 , pp. 665
- Dingle, R.¹ Störmer, H.L.² Gossard, A.C.³ Wiegmann, W.⁴

3
- 84951490594
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
- (1980) Japanese Journal of Applied Physics , vol.19 , pp. L225
- Mimura, T.¹ Hiyamizu, S.² Fujii, T.³ Nanbu, K.⁴

4
- 4243322727
- For review, see
- (1983) Surf. Sci. , vol.132 , pp. 519
- Störmer, H.L.¹

5
- 0000405725
- (1983) Jpn. J. Appl. Phys. , vol.21 , pp. L609
- Hiyamizu, S.¹ Saito, J.² Nanbu, K.³ Ishikawa, T.⁴

6
- 0021410041
- (1984) Appl. Phys. Lett. , vol.44 , pp. 802
- Hwang, J.C.M.¹ Kastalsky, A.² Störmer, H.L.³ Keramidas, V.G.⁴

7
- 0021451985
- (1984) Appl. Phys. Lett. , vol.44 , pp. 1064
- Heiblum, M.¹ Mendez, E.E.² Stern, F.³

8
- 18744421979
- (1982) Jpn. J. Appl. Phys. , vol.21 , pp. 1489
- Keever, M.¹ Kopp, W.² Drummond, T.J.³ Morkoc, H.⁴ Hess, K.⁵

9
- 85032069152
- For review, see
- (1982) Rev. Mod. Phys. , vol.54 , pp. 437
- Ando, T.¹ Fowler, A.B.² Stern, F.³

10
- 34547827353
- (1967) Phys. Rev. , vol.163 , pp. 816
- Stern, F.¹ Howard, W.E.²

11
- 0020304504
- (1982) J. Phys. Soc. Jpn. , vol.51 , pp. 3893
- Ando, T.¹

12
- 0041725896
- (1969) J. Phys. Soc. Jpn. , vol.27 , pp. 906
- Kawaji, S.¹

13
- 0542364625
- (1978) Surf. Sci. , vol.75 , pp. 86
- Ferry, D.K.¹

14
- 84916408397
- (1979) Appl. Phys. Lett. , vol.35 , pp. 485
- Hess, K.¹

15
- 0004999024
- (1981) Ann. Phys. (N.Y.) , vol.133 , pp. 217
- Price, P.J.¹

16
- 33744665673
- (1982) Surf. Sci. , vol.113 , pp. 199
- Price, P.J.¹

17
- 0000826195
- (1982) J. Phys. C , vol.15 , pp. 5899
- Ridley, B.K.¹

18
- 0001240061
- (1979) Phys. Rev. B , vol.19 , pp. 6433
- Mori, S.¹ Ando, T.²

19
- 0021500914
- (1984) J. Appl. Phys. , vol.56 , pp. 1722
- Yamaguchi, E.¹

20
- 0020879920
- (1983) J. Appl. Phys. , vol.54 , pp. 6995
- Lee, J.¹ Spector, H.N.² Arora, V.K.³

21
- 0001655132
- (1984) Phys. Rev. B , vol.30 , pp. 4571
- Walukiewicz, W.¹ Ruda, H.E.² Lagowski, J.³ Gatos, H.C.⁴

22
- 35949025517
- For review, see
- (1983) Rev. Mod. Phys. , vol.55 , pp. 645
- Jacoboni, C.¹ Reggiani, L.²

23
- 0021520683
- (1984) IEEE Electron Device Lett. , vol.5 EDL , pp. 464
- Tomizawa, M.¹ Yokoyama, K.² Yoshii, A.³

24
- 0004457553
- (1984) Phys. Rev. B , vol.30 , pp. 840
- Stern, F.¹ Das Sarma, S.²

25
- 0348120415
- (1971) J. Phys. C , vol.4 , pp. 2064
- Hedin, L.¹ Lundqvist, B.I.²

26
- 0011871985
- Computer Solutions to the Schrödinger Equation
- (1972) American Journal of Physics , vol.40 , pp. 730
- Chow, P.C.¹

27
- 49849110942
- (1970) J. Comput. Phys. , vol.6 , pp. 56
- Stern, F.¹

28
- 0021376825
- (1984) Appl. Phys. Lett. , vol.44 , pp. 307
- Vinter, B.¹

29
- 0014846935
- (1970) J. Phys. Chem. Solids , vol.31 , pp. 1963
- Fawcett, W.¹ Boardman, A.D.² Swain, S.³

30
- 0014836199
- (1970) J. Appl. Phys. , vol.41 , pp. 3843
- Ruch, J.G.¹ Fawcett, W.²

31
- 0012734320
- (1985) Phys. Rev. B , vol.31 , pp. 6872
- Yokoyama, K.¹ Hess, K.²

32
- 0039801399
- (1972) Phys. Rev. B , vol.6 , pp. 4517
- Wang, S.Q.¹ Mahan, G.D.²

33
- 0018483199
- (1979) Solid State Commun. , vol.30 , pp. 807
- Hess, K.¹ Vogl, P.²

34
- 84926572360
- This is not generally the case as pointed out by A. Pinczuk (private communication).

35
- 25944450446
- (1985) Phys. Rev. B , vol.32 , pp. 2643
- Price, P.J.¹

36
- 7044278445
- (1985) Phys. Rev. B , vol.32 , pp. 2645
- Walnkiewicz, W.¹ Ruda, H.E.² Lagowski, J.³ Gatos, H.C.⁴

37
- 84926530274
- The effective well widths from the first to the fifth subband are 6.6, 11.0, 14.4, 17.3, and 19.8 nm for 77 K, and 6.1, 9.8, 13.1, 15.9, and 18.4 nm for 300 K.

38
- 0021517201
- (1984) J. Appl. Phys. , vol.56 , pp. 2850
- Leburton, J.P.¹

39
- 0003009604
- (1983) Appl. Phys. Lett. , vol.42 , pp. 55
- Shah, J.¹ Pinczuk, A.² Störmer, H.L.³ Gossard, A.C.⁴ Wiegmann, W.⁵

40
- 84926544174
- The peak locations for the density functions from the first to the fifth subband are 4.8, 16.8, 28.2, 38.4, and 47.6 nm at 77 K, and 4.4, 14.8, 25.0, 35.0, and 44.2 nm at 300 K.

41
- 0343157554
- (1985) J. Appl. Phys. , vol.57 , pp. 5336
- Wang, T.¹ Hess, K.²

42
- 0019606502
- Ballistic electron transport in semiconductors
- (1981) IEEE Transactions on Electron Devices , vol.28 ED , pp. 937
- Hess, K.¹

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