Ensemble Monte Carlo Simulation of a 0.35-µm Pseudomorphic HEMT

IEEE Electron Device Letters

Volumn 10, Issue 3, 1989, Pages 107-110

  Park, Duke H ^a   Wang, Yang ^a   Brennan, Kevin F ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRONS--TRANSPORT PROPERTIES; MATHEMATICAL STATISTICS--MONTE CARLO METHODS; SEMICONDUCTING INDIUM COMPOUNDS--ELECTRONIC PROPERTIES;

2D ELECTRON GAS; 2D POISSON EQUATION; ENSEMBLE MONTE CARLO SIMULATION; PSEUDOMORPHIC HEMT;

TRANSISTORS;

EID: 0024629213     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.31684     Document Type: Article

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