Five-valley model for the study of electron transport properties at very high electric fields in GaAs

Semiconductor Science and Technology

Volumn 6, Issue 9, 1991, Pages 862-871

  Gonzalez Sanchez, T ^a   Velazquez Perez, J E ^a   Gutierrez Conde, P M ^a   Pardo Collantes, D ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

FIVE-VALLEY MODEL;

ELECTRIC FIELD EFFECTS; ELECTRONIC PROPERTIES; MATHEMATICAL STATISTICS--MONTE CARLO METHODS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026220956     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/6/9/005     Document Type: Article

References (29)

1. The determination of impact ionization coefficients in
2. Microwave measurement of the velocity-field characteristic of GaAs