Short-Channel Effects in Subquarter-Micrometer-Gate HEMT’s: Simulation and Experiment

IEEE Transactions on Electron Devices

Volumn 36, Issue 10, 1989, Pages 2260-2266

  Awano, Yuji ^a   Kosugi, Makoto ^a   Kosemura, Kinjiro ^a   Mimura, Takashi ^a   Abe, Masayuki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL STATISTICS--MONTE CARLO METHODS; SEMICONDUCTOR DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS; MODFETS;

TRANSISTORS, FIELD EFFECT;

EID: 0024753983     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.40908     Document Type: Article

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