Two-Dimensional Transient Simulation of an Idealized High Electron Mobility Transistor

IEEE Transactions on Electron Devices

Volumn 32, Issue 6, 1985, Pages 1092-1102

  Widiger, David J ^a   Kizilyalli, I C ^b   Hess, Karl ^b   Coleman, James ^b  

^a IBM   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - TRANSPORT PROPERTIES; MATHEMATICAL MODELS;

HIGH ELECTRON MOBILITY TRANSISTORS; QUANTUM SUBBAND SYSTEMS; TRANSCONDUCTANCE;

TRANSISTORS;

EID: 0022079882     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22080     Document Type: Article

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