Scaling Properties of High Electron Mobility Transistors

IEEE Transactions on Electron Devices

Volumn 33, Issue 10, 1986, Pages 1427-1433

  Kizilyalli, Isik C ^a   Hess, Karl ^a   Larson, John L ^b   Widiger, David J ^c  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b CRAY INC   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001698355     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22690     Document Type: Article

References (9)

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3. R. H. Dennard, F. H. Gaensslen, H. Yu, V. L. Rideout, E. Bassous, and A. R. LeBlanc, “Design of ion implanted MOSFET's with very small physical dimensions,” IEEE J. Solid-State Circuits, vol. SC–9, no. 5, pp. 256–268, 1974.
4. G. V. Ram and M. J. Elmasry, “On the scaling of Si-MESFET s,” IEEE Electron Device Lett., vol. EDL-1, no. 12, pp. 259–262, 1980.
5. K. Yokoyama, M. Tomizawa, and A. Yoshii, “Scaled performance for submicron GaAs MESFET's,” IEEE Electron Device Lett., vol. EDL-6, no. 10, pp. 536–538, Oct. 1985.
6. 1-xAs heterojunctions,” Japan. J. Appl. Phys., vol. 19, pp. L225-L227, 1980.
7. D. Widiger, I. C. Kizilyalli, K. Hess, and J. J. Coleman, “Two-dimensional transient simulation of the high electron mobility transistor,” IEEE Trans. Electron Devices, vol. ED-32, no. 6, pp. 1092–1102, 1985.
8. P. M. Solomon and H. Morkoç, “Modulation-doped GaAs/AlGaAs heterojunction field effect transistors (MODFET), ultrahigh-speed device for supercomputers,” IEEE Trans. Electron Devices, vol. ED-31, no. 8, pp. 1015–1027, 1984.
9. E. Constant, “Non-steady-state carrier transport in semiconductors in perspective with submicrometer devices,” in Hot-Electron Transport in Semiconductors, L. Reggiani, Ed. New York: Springer-Verlag, 1984.