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Volumn 19, Issue 2, 1979, Pages 1015-1030
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Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-doped AlxGa1-xAs
a a b,c |
Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 12444262584
PISSN: 01631829
EISSN: None
Source Type: Journal
DOI: 10.1103/PhysRevB.19.1015 Document Type: Article |
Times cited : (769)
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References (47)
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