A new charge conserving capacitance model for GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 1813-1821

  Nawaz, Muhammad ^a   Fjeldly, Tor A ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; ELECTRIC CURRENTS; GATES (TRANSISTOR); MATRIX ALGEBRA; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

CHARGE CONSERVING CAPACITANCE MODEL; KIRCHHOFF'S CURRENT LAW; TRANSCAPACITANCES;

MESFET DEVICES;

EID: 0031276908     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641347     Document Type: Article

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