Enhanced GaAs MESFET CAD Model for a Wide Range of Temperatures

IEEE Transactions on Electron Devices

Volumn 42, Issue 10, 1995, Pages 1724-1734

  Ytterdal, Trond ^a   Moon, Byung Jong ^c   Fjeldly, Tor A ^b   Shur, Michael S ^b  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b UNIVERSITY OF VIRGINIA   (United States)

^c Vitesse Semiconductor Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; CONVERGENCE OF NUMERICAL METHODS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; PHYSICS; SEMICONDUCTING GALLIUM ARSENIDE; TEMPERATURE; TRANSCONDUCTANCE; VELOCITY; VLSI CIRCUITS;

BACKGATING; BIAS DEPENDENT AVERAGE LOW FIELD MOBILITY; BIAS DEPENDENT SERIES SOURCE; DRAIN INDUCED BARRIER LOWERING; EFFECTS OF BULK CHARGE; FINITE OUTPUT CONDUCTANCE; FREQUENCY DEPENDENT OUTPUT CONDUCTANCE; SIDEGATING; SOFTWARE PACKAGE DEVICE; VELOCITY SATURATION;

MESFET DEVICES;

EID: 0029393045     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.464426     Document Type: Letter

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