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Volumn 36, Issue 9, 1989, Pages 1557-1563

A Gaas Mesfet Small-Signal Equivalent Circuit Including Transmission Line Effects

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS--TRANSMISSION LINE THEORY; INTEGRATED CIRCUITS--MICROWAVES; OPTIMIZATION;

EID: 0024739565     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.34212     Document Type: Article
Times cited : (6)

References (13)
  • 1
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    • (1976) IEEE Trans. Microwave Theory Tech. , vol.MTT-26 , pp. 279-300
    • Liechti, C.A.1
  • 2
    • 0020250162 scopus 로고
    • Quarter micron low noise GaAs FET's
    • Dec.
    • P. W. Chye and C. Huang, “Quarter micron low noise GaAs FET's,” IEEE Electron Device Lett., vol. EDL-3, pp. 401–403, Dec. 1982.
    • (1982) IEEE Electron Device Lett. , vol.EDL-3 , pp. 401-403
    • Chye, P.W.1    Huang, C.2
  • 3
    • 25944469614 scopus 로고
    • Gunn domain formation in the saturated current region of GaAs MESFET's
    • Dec.
    • R. W. H. Engelmann and C. A. Liechti, “Gunn domain formation in the saturated current region of GaAs MESFET's,” in IEDM Tech. Dig., Dec. 1976, pp. 351–354.
    • (1976) IEDM Tech. Dig. , pp. 351-354
    • Engelmann, R.W.H.1    Liechti, C.A.2
  • 4
    • 0017242029 scopus 로고
    • Two-dimensional numerical analysis of stability criteria of GaAs FET's
    • Dec.
    • K. Yamaguchi, S. Asai, and H. Kodeira, “Two-dimensional numerical analysis of stability criteria of GaAs FET's,” IEEE Trans. Electron Devices, vol. ED-23, pp. 1283–1290, Dec. 1976.
    • (1976) IEEE Trans. Electron Devices , vol.ED-23 , pp. 1283-1290
    • Yamaguchi, K.1    Asai, S.2    Kodeira, H.3
  • 5
    • 0020805990 scopus 로고
    • Negative differential resistance in GaAs MESFET's
    • Aug.
    • T. A. Fjeldly and J. S. Johannessen, “Negative differential resistance in GaAs MESFET's,” Electron. Lett., vol. 19, pp. 649–650, Aug. 1983.
    • (1983) Electron. Lett. , vol.19 , pp. 649-650
    • Fjeldly, T.A.1    Johannessen, J.S.2
  • 6
    • 0022751620 scopus 로고
    • Analytical modeling of the stationaiy domain in GaAs MESFET's
    • July
    • T. A. Fjeldly, “Analytical modeling of the stationaiy domain in GaAs MESFET's,'' IEEE Trans. Electron Devices, vol. ED-33, pp. 874–880, July 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 874-880
    • Fjeldly, T.A.1
  • 7
    • 50549196309 scopus 로고
    • Calculation of high-frequency characteristics of field-effect transistors
    • J. A. Geurst, “Calculation of high-frequency characteristics of field-effect transistors,” Solid-State Electron., vol. 8, pp. 563–566, 1965.
    • (1965) Solid-State Electron. , vol.8 , pp. 563-566
    • Geurst, J.A.1
  • 8
    • 84944291102 scopus 로고
    • Frequenzverhalten von Sperrschicht-Feldeffekttransistoren
    • R. Paul, “Frequenzverhalten von Sperrschicht-Feldeffekttransistoren,” Arch. Elek. Übertragung, vol. 21, pp. 259–272, 1967.
    • (1967) Arch. Elek. Übertragung , vol.21 , pp. 259-272
    • Paul, R.1
  • 9
    • 84944293235 scopus 로고
    • M.Sc. thesis Norwegian Institute of Technology, Univ. of Trondheim, Dec. (in Norwegian)
    • A. Paulsen, M.Sc. thesis Norwegian Institute of Technology, Univ. of Trondheim, Dec. 1987 (in Norwegian).
    • (1987)
    • Paulsen, A.1
  • 10
    • 0022059446 scopus 로고
    • A capacitance model for GaAs MESFET's
    • May
    • T. Chen and M. Shur, “A capacitance model for GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-12, pp. 883–891, May 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-12 , pp. 883-891
    • Chen, T.1    Shur, M.2
  • 12
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    • Touchstone, Version 1.6
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    • “Touchstone, Version 1.6,” EEsof, Inc., Nov. 1987.
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  • 13
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    • Gallium arsenide IC design manual—GaAs 1 process, Version 2.0
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    • “Gallium arsenide IC design manual—GaAs 1 process, Version 2.0,” TriQuint Semiconductor, Jan. 1987.
    • (1987)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.