Comments on “GaAs FET Device and Circuit Simulation in SPICE”

IEEE Transactions on Electron Devices

Volumn 34, Issue 12, 1987, Pages 2564-2565

  Divekar, Dileep ^a  

^a Simucad Corporation ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346457946     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23352     Document Type: Note

References (2)

1. H. Statz, P. Newman, I. Smith, R. Pucel, and H. Haus, “GaAs FET device and circuit simulation in SPICE”, IEEE Trans. Electron Devices, vol. ED-34, no. 2, pp. 160-169, Feb. 1987.
2. P. Yang, B. Epler and P. Chatteijee, “An investigation of the charge conservation problem for MOSFET circuit simulation”, IEEE J. Solid-State Circuits, vol. SC-18, no. 1, pp. 128-138, Feb. 1983.