Phase Shifts in Single- and Dual-Gate GaAs MESFET’s for 2-4-GHz Quadrature Phase Shifters

IEEE Transactions on Microwave Theory and Techniques

Volumn 32, Issue 10, 1984, Pages 1280-1288

  Mondal, Jyoti P ^a   Milnes, Arthur G ^a   Oakes, James G ^b   Wang, Shing Kuo ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN - APPLICATIONS; ELECTRONIC CIRCUITS, PHASE CHANGER - MICROWAVES; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS;

AMPLITUDE AND PHASE ERRORS; METAL-SEMICONDUCTOR FET (MESFET); QUADRATURE PHASE SHIFTERS; SINGLE- AND DUAL-GATE MESFETS; TRANSMISSION PHASE VARIATION;

TRANSISTORS, FIELD EFFECT;

EID: 0021510763     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1984.1132838     Document Type: Article

References (6)

1. M., Kumar et al., “Broadband active phase shifter using dual gate MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-29, pp. 1098–1101, Oct. 1981.
2. C. Tsironis and P. Hamp, “Dual gate GaAs MESFET phase shifters with gain at 12 GHz,” Electron. Lett., no. 14, pp. 553-554, 1980.
3. R. W. H. Engelmann and C. A. Liechti, “Bias dependence of GaAs and InP MESFET parameters,” IEEE Trans. Electron Devices, vol. ED-29, no. 11, pp. 1288–1296, Nov. 1977.
4. H. A. Willing et al., “A technique for predicting large-signal performance of a GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-26, pp. 1017–1023, Dec. 1978.
5. Y. Tajima et al., “GaAs FET large-signal model and its application to circuit designs,” IEEE Trans. Electron Devices, vol. ED-28, pp. 171–175, Feb. 1981.
6. H. Statz et al., “Noise characteristic of gallium arsenide field effect transistors,” IEEE Trans. Electron Devices, vol. ED-21, pp. 549–562, Sept. 1979.