Instantaneous Model of a MESFET for use in Linear and Nonlinear Circuit Simulations

IEEE Transactions on Microwave Theory and Techniques

Volumn 40, Issue 7, 1992, Pages 1410-1421

  Corbella, Ignasi ^a   Legido, Josep Maria ^a   Naval, Gonzalo ^a  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, POWER TYPE--DESIGN; COMPUTER SIMULATION--APPLICATIONS; ELECTRIC NETWORKS--EQUIVALENT CIRCUITS; TRANSISTORS--APPLICATIONS;

EXTRINSIC PARASITIC ELEMENTS; INSTANTANEOUS MODEL; INTRINSIC TRANSISTOR; LINEAR/NONLINEAR CIRCUIT SIMULATIONS; SMALL SIGNAL EQUIVALENT CIRCUIT;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026889212     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.146322     Document Type: Article

References (17)

1. Y. Tajima, and P. Miller, “Design of broad-band power GaAs FET amplifiers,” IEEE Trans. Microwave Theory Tech., vol. MTT-32 no. 3, pp. 261–267, Mar. 1984.
2. W. Curtice and M. Ettenberg, “A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers,” IEEE Trans. Microwave Theory Tech. vol. MTT-33 no. 12, pp. 1383–1393, Dec. 1985.
3. A. Materka, T. Kacprzak, “Computer Calculation of large signal GaAs FET amplifier characteristics,” IEEE Trans. Microwave Theory Tech, vol MTT-33, no. 2, pp. 129–135, Febr. 1985.
4. H. Statz, P. Newman, I. Smith, R. Pucel, and H. Haus, “GaAs FET device and circuit simulation in spice,” IEEE Trans. Electron Devices, vol. SC-34, pp. 160–169, 1987.
5. J. M. Golio, Microwave MESFETs & HEMTS. Norwood, MA: Artech House, 1991.
6. G. Dambrine et al. “A new method for determining the FET small-signal equivalent circuit,” IEEE Trans. Microwave Theory Tech., vol. 36, no. 7, pp. 1152–1159, July 1988.
7. H. A. Willing, C. Rauscher, and P. de Santis, “A Technique for Predicting Large-Signal Performance of a GaAs MESFET.” IEEE Trans. Microwave Theory Tech., vol. MTT-26 pp 1017–1023. Dec. 1978.
8. J. T. Entrambasaguas Munoz, “Modelado delos efectos de propagación transversal en transistores MESFET de microondas,” Doctoral Thesis, UPM Madrid, 1990, (in Spanish).
9. R. Soares, GaAs MESFET Circuit Design. Norwood, MA: Artech House, 1988.
10. S. Weinreb, “Low-noise cooled GASFET amplifiers,” IEEE Trans. Microwave Theory Tech., vol. MTT-28, no. 10, pp 1041–1053, Oct. 1980.
11. S. A. Maas, Microwave Mixers. Dedham, MA: Artech House, 1986, pp. 79–80.
12. H. Fukui, “Determination of the basic device parameters of GaAs MESFET,” Bell Syst. Tech. J., pp. 771–797, Mar. 1979.
13. F. Diamand and M. Laviron, “Measurement of the extrinsic elements of a microwave MESFET under zero current conditions,” in Proc. I2th European Microwave Conf. 1982, pp. 451–456.
14. K. W. Lee, K. Lee, M. Shur, T. T. Vu, P. Roberts, and M. Helix, “Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET’s” IEEE Trans. Electron Devices, vol. ED-32, no. 5. pp. 987–992. May 1985.
15. R. Vogel, “Determination of the MESFET resistive parameters using RF-wafer probing,” in Proc. 17th European Microwave Conf., 1987, pp. 181–225.
16. W. R. Curtice., “A MESFET model for use in the design of GaAs integrated circuits,” IEEE Trans. Microwave Theory Tech., vol. MTT-28, pp. 448–456, May 1980.
17. L. Pradell, C. Sabater, E. Artal, A. Comeron, J. Bara, I. Corbella, and J. Fortuny, “TRL calibration applied to the measurement of chip transistor 5-Parameters up to 40 GHz,” in Proc. 20th European Microwave Conf., Sept. 1990.