A New Technique to Determine the Average Low-Field Electron Mobility in MESFET Using C-V Measurement

IEEE Transactions on Electron Devices

Volumn 39, Issue 9, 1992, Pages 1982-1986

  Lee, Seonghearn ^b   Helix, Max J ^a  

^a Vitesse Semiconductor Corporation   (United States)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC PROPERTIES; GATES (TRANSISTOR); INTEGRAL EQUATIONS;

C-V MEASUREMENTS; ELECTRON MOBILITY;

MESFET DEVICES;

EID: 0026926917     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.155868     Document Type: Article

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