Non-Quasi-Static Transient and Small-Signal Two-Dimensional Modeling of GaAs MESFET's with Emphasis on Distributed Effects

IEEE Transactions on Electron Devices

Volumn 40, Issue 12, 1993, Pages 2154-2163

  Tiwari, Sandip ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED ANALYSIS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC NETWORK PARAMETERS; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SIGNAL PROCESSING;

CURRENT CONTINUITY; DISPLACEMENT CURRENTS; HIGH FREQUENCY SMALL SIGNAL CONDITION; HIGH SPEED TRANSIENT CONDITION; NEGATIVE DIFFERENTIAL MOBILITY; UNILATERAL GAIN;

MESFET DEVICES;

EID: 0027849315     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.249459     Document Type: Article

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