A MESFET Variable-Capacitance Model for GaAs Integrated Circuit Simulation

IEEE Transactions on Microwave Theory and Techniques

Volumn 30, Issue 5, 1982, Pages 719-724

  Takada, Tohru ^a   Yokoyama, Kiyoyuki ^a   Ida, Masao ^a   Sudo, Tsuneta ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; TRANSISTORS, FIELD EFFECT - MATHEMATICAL MODELS;

MESFET VARIABLE CAPACITANCE MODEL; METAL SEMICONDUCTOR FET (MESFET);

INTEGRATED CIRCUITS;

EID: 0020125695     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1982.1131127     Document Type: Article

References (7)

1. W. R. Curtice, “A MESFET model for use in the design of GaAs integrated circuits,” IEEE Trans. Microwave Theory Tech., vol. MTT-28, pp. 448-456, May 1980.
2. M. S. Shur, “Analytical model of GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-25, pp. 612-618, June 1978.
3. R. Pucel, H. Haus, and H. Statz, “Signal and noise properties of gallium arsenide microwave field-effect transistors,” in Advances in Electronics and Electron Physics, vol. 38. New York: Academic Press, 1975, pp. 195-205.
4. K. Yamaguchi, S. Asai, and H. Kodera, “Two-dimensional analysis of stability criteria of GaAs FET's, “IEEE Trans. Electron. Devices, vol. ED-23, pp. 1283-1290, Dec. 1976.
5. K. Yokoyama, M. Tomizawa, T. Takada, A. Yoshii, and T. Sudoh, “Nonlinear capacitance analysis of GaAs MESFET using two-dimensional numerical simulator,” to be published.
6. K. Yamaguchi and H. Kodera, “Drain conductance of junction gate FET's in the hot electron range,” IEEE Trans. Electron Devices, vol., ED-23, pp. 545-553, June 1976.
7. P. E. Grey, et al., Physical Electronics and Circuit Models of Transistors. New York: Wiley, 1963.