Improved Junction Capacitance Model for the GaAs MESFET

IEEE Transactions on Electron Devices

Volumn 40, Issue 11, 1993, Pages 2083-2085

  Rodriguez Tellez, J ^a   Mezher, K ^a   Al Daas, M ^a  

^a UNIVERSITY OF BRADFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; MATHEMATICAL MODELS; MICROWAVE DEVICES; NONLINEAR NETWORKS; PARAMETER ESTIMATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

GALLIUM ARSENIDE MESFET; JUNCTION CAPACITANCE MODEL; NONLINEAR MICROWAVE CIRCUITS;

MESFET DEVICES;

EID: 0027694228     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.239753     Document Type: Article

References (8)

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