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Solid State Electronics

Volumn 34, Issue 7, 1991, Pages 693-700

Investigation of GaAs MESFET equivalent circuits using transient current-continuity equation solutions

(1) Anholt, R a

a Gateway Modeling Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

CURRENT-CONTINUITY EQUATIONS; GATE-LENGTH MESFET;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026187084 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(91)90004-I Document Type: Article

Times cited : (7)

References (16)

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10
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- A new method for determining the FET small-signal equivalent circuit
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11
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14
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- GaAs FET device and circuit simulation in SPICE
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.