Low field mobility, effective saturation velocity and performance of submicron GaAs MESFETs

Electronics Letters

Volumn 18, Issue 21, 1982, Pages 909-910

  Shur, M S ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

Field effect transistors; Semiconductor devices and materials

Indexed keywords

MESFET;

TRANSISTORS, FIELD EFFECT;

EID: 0020194026     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19820619     Document Type: Article

References (7)

1. SHUR, M. S.: ‘Analytical model of GaAs MESFETs’, IEEE Trans., 1978, ED-25, pp. 612-618
2. SHUR, M. S., and EASTMAN, L. F.: ‘I-V characteristics of GaAs MESFET with nonuniform doping profile’, IEEE Trans., 1980, ED-27, pp. 455-461
3. TURNER, J. A., and WILSON, B. L. H.: ‘Implications of carrier velocity saturation in a gallium arsenide field-effect transistor’. Proc. GaAs, Inst. Phys. and Phys. Soc., 1968, pp. 195-204
4. LEHOVEC, K., and ZULEEG, R.: ‘Voltage-current characteristics of GaAs J-FETS in the hot electron range’, Solid-State Electron., 1970, 13, pp. 1415-1426
5. HOWER, P. L., and BECHTEL, G.: ‘Current saturation and smallsignal characteristics of GaAs field-effect transistors’, IEEE Trans., 1973, ED-20, pp. 213-220
6. HELIX, M. J., JAMISON, S. A., CHAO, C., and SHUR, M.: ‘Fanout and speed of GaAs SDFL logic’, J. Solid-State Circuits, to be published
7. DRUMMOND, T. J., MORKOC, H., and CHO, A. Y.: ‘Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1-xAs/GaAs heterostructures’, J. Appl. Phys., 1981, 52, pp. 1380-1386