A Unified Physical DC and AC MESFET Model for Circuit Simulation and Device Modeling

IEEE Transactions on Electron Devices

Volumn 34, Issue 9, 1987, Pages 1995-2001

  Johnson, Ralph H ^a   Johnson, Brian W ^a   Biard, J R ^a  

^a Honeywell Optoelectronics ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS - COMPUTER SIMULATION;

AC MODEL; DC MODEL; MESFET; SIMULATION PROGRAM WITH INTEGRATED CIRCUIT EMPHASIS; SPICE;

TRANSISTORS, FIELD EFFECT;

EID: 0023422737     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23186     Document Type: Article

References (9)

1. W. R. Curtice, “A MESFET model for use in the design of GaAs integrated circuits,” IEEE Trans. Microwave Theory Tech., vol. MTT-28, no. 5, pp. 448-456, 1980.
2. W. A. White and M. R. Namordi, “GaAs MESFET model adds life to SPICE,’ Microwaves and RF, Sept. 1984.
3. J. M. Golio, J. R. Hauser, and P. A. Blakey, “A large-signal GaAs MESFET model implemented on SPICE,” IEEE Circuits and Devices, pp. 21-30, Sept. 1985.
4. T.-H. Chen and M. S. Shur, “Analytical models of ion-implanted GaAs FET's,” IEEE Trans. Electron Devices, vol. ED 32, pp. 18-28, Jan. 1985.
5. D. Hiser, private communication.
6. J. Xu, B. A. Bernhardt, M. Shur, C.-H. Chen, and A. Peczalski, “Electron mobility and velocity in compensated GaAs,” Appl. Phys. Lett., vol. 49, no. 8, pp. 342-344, Aug. 1986.
7. M. Plagens, “GaAs MESFET model adds short channel effects to SPICE,” to be published.
8. M. Plagens and R. Biesterfeldt, “Integral diode FET logic,” to be published.
9. C. P. Lee, R. Zucca, and B. M. Welch, “Orientation effect on planar GaAs Schottky barrier field effect transistors,” Appl. Phys. Lett., vol. 37, pp. 311-313, Aug. 1980.