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Volumn E80-C, Issue 7, 1997, Pages 881-885

Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device

Author keywords

Coulomb blockade; Short channel device; Single electron

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; TRANSISTORS; TUNNEL JUNCTIONS;

EID: 0031192154     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (4)

References (39)
  • 7
    • 0030288211 scopus 로고    scopus 로고
    • 100-K operation of Al-based single-electron transistors,Jpn. J. Appl. Phys., vol.35, no.HA, pp.L1465-L1467, 1996.
    • Y. Nakamura, C. Chen, and J.-S. Tsai, 100-K operation of Al-based single-electron transistors,Jpn. J. Appl. Phys., vol.35, no.HA, pp.L1465-L1467, 1996.
    • Nakamura, Y.1    Chen, C.2    Tsai, J.-S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.