Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement

Applied Physics Letters

Volumn 68, Issue 2, 1996, Pages 275-277

  Nakamura, Y ^a   Klein, D L ^a   Tsai, J S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000252777     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115661     Document Type: Article

References (12)

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