Resonant tunneling properties of single electron transistors with a novel double-gate geometry

Applied Physics Letters

Volumn , Issue , 1995, Pages 526-

  Fujisawa, Toshimasa ^a   Tarucha, Seigo ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

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EID: 36449008750     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116388     Document Type: Article

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