Single-electron effects in a point contact using side-gating in delta-doped layers

Applied Physics Letters

Volumn 61, Issue 26, 1992, Pages 3145-3147

  Nakazato, Kazuo ^a   Thornton, Trevor J ^b   White, Julian ^a   Ahmed, Haroon ^c  

^a HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

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EID: 36449004325     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.107988     Document Type: Article

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