Silicon-based single-electron-tunneling transistor operated at 4.2 k

Japanese Journal of Applied Physics

Volumn 34, Issue 8, 1995, Pages 4485-4487

  Ohata, Akiko ^a   Niiyama, Hiromi ^a   Shibata, Toru ^a   Nakajima, Kazuaki ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Coulomb blockade; Polycrystalline silicon wire; Silicon; Single electron tunneling transistor

Indexed keywords

CIRCUIT OSCILLATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; TUNNEL JUNCTIONS; X RAY SPECTROSCOPY;

COULOMB BLOCKADE; DRAIN VOLTAGE; GATE VOLTAGE; NONLINEAR RESISTANCE; PERIODIC CONDUCTANCE OSCILLATIONS; POLYCRYSTALLINE SILICON WIRE; SINGLE ELECTRON TUNNELING TRANSISTOR;

TRANSISTORS;

EID: 0029350205     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.4485     Document Type: Article

References (2)

1. T. A. Fulton and G. J. Dolan: Phys. Rev. Lett. 59 (1987) 109.
2. G. L. Ingold and Y. V. Nazarov: Single Charge Tunneling, eds. H. Grabert and M. H. Devoret (Plenum Press, New York, 1992) Series B, Vol. 294, Chap. 2.