Single electron digital phase modulator

Japanese Journal of Applied Physics

Volumn 34, Issue 1, 1995, Pages 83-84

  Woo Hwang, Sung ^a   Sakamoto, Toshitsugu ^a   Nakamura, Kazuo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Phase modulator; Single electron transistor

Indexed keywords

AMPLIFIERS (ELECTRONIC); CURRENT VOLTAGE CHARACTERISTICS; ELECTRONS; INTEGRATED CIRCUIT LAYOUT; PHASE MODULATION; PHASE SHIFT; TUNNEL JUNCTIONS;

SINGLE ELECTRON DIGITAL PHASE MODULATOR;

FIELD EFFECT TRANSISTORS;

EID: 0029203937     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.83     Document Type: Article

References (8)

1. See, for example, Single Charge Tunneling: Coulomb BlockadePhenomena in Nanostructures, eds. H. Grabert and M. H.Devoret (Plenum, New York and London, 1992) NATO ASISeries B; Physics Voi. 294.
2. P. D. Dresselhaus, L. Ji, Siyuan Han, J. E. Lukens and K. K.Likharev: Phys. Rev. Lett. 72 (1994) 3226.
3. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai and K.Seki: IEDM 93’ (1993) p. 541.
4. Principles of communications, Systems, Modulation, and Noise, Ziemer and Tranter (Houghton Mifflin, Boston, 1976). PM is thesimplest form of the frequency modulation (FM). The main advantage of this technique is the very large signal to noise ratiosince we can maintain a negligible bandwidth in comparison tothe carrier frequency.
5. See, for example, K. Mullen and E. Ben-Jacob: Phys. Rev. В 37 (1988) 98.
6. В. Laikhtman: Phys. Rev. B 43 (1991) 2731.
7. 1.See, for example, G.-L. Ingold, P. Wyrowski and H. Grabert: Z.Phys. В 85 (1991) 443. This change does not affect our conclusion.
8. G. Zimmerli, R. L. Kautz and J. M. Martinis: Appi. Phys. Lett.85 (1991) 443.