100-K operation of Al-based single-electron transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 11 PART A, 1996, Pages

  Nakamura, Yasunobu ^a   Chen, ChiiDong ^a   Tsai, Jaw Shen ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Anodization; High temperature operation; Periodic gate modulation; Shadow evaporation; Single electron transistor

Indexed keywords

ALUMINUM; ANODIC OXIDATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS;

ALUMINUM BASED SINGLE ELECTRON TRANSISTORS; ISLAND ELECTRODES; PERIODIC GATE MODULATION; PERIODIC GATE VOLTAGE; THREE ANGLE SHADOW EVAPORATION;

TRANSISTORS;

EID: 0030288211     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1465     Document Type: Article

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