Numerical simulation of tunnel effect transistors employing internal field emission of schottky barrier junction

Japanese Journal of Applied Physics

Volumn 33, Issue 1, 1994, Pages 612-618

  Hattori, Reiji ^a   Shirafuji, Junji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Device simulation; Schottky barrier; TFT; Triodelike; Tunnel transistor

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRIC CURRENT CONTROL; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; THIN FILM DEVICES; TUNNEL DIODES;

INTERNAL FIELD EMISSION; SCHOTTKY BARRIER JUNCTION; THIN FILM TRANSISTORS; TRIODELIKE; TUNNEL EFFECT TRANSISTORS;

TRANSISTORS;

EID: 0028192851     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.612     Document Type: Article

References (13)

1. R. Hattori, A. Nakae and J. Shirafuji: Jpn. J. Appl. Phys. 31 (1992) L1467.
2. M. P. Lepselter and S. M. Sze: Proc. IEEE 56 (1968) 1400.
3. J. R. Barker and D. K. Ferry: Solid-State Electron. 23 (1980) 531.
4. M. Sugino, L. A. Akers and M. E. Rebeschini: IEDM Tech. Dig. (1982) p. 462.
5. K. Yamaguchi: IEEE Trans. Electron Devices ED-30 (1983) 658.
6. H. K. Gummel: IEEE Trans. Electron Devices ED-11 (1964) 455.
7. C. R. Crowell and S. M. Sze: Solid State Electron. 9 (1966) 1035.
8. E. O. Kane: J. Appl. Phys. 32 (1961) 83.
9. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed., p. 257.
10. I. Nedev, A. Asenov and E. Stefanov: Solid-State Electron. 34 (1991) 1401.
11. J. Nishizawa, T. Terasaki and J. Shibata: IEEE Trans. Electron Devices ED-22 (1975) 185.
12. C. O. Bozler and D. Alley: IEEE Trans. Electron Devices ED-27 (1980) 1128.
13. K. Yamaguchi and H. Kodera: IEEE Trans. Electron Devices ED-24 (1977) 1061