Coulomb blockade in the inversion layer of a Si metal-oxide-semiconductor field-effect transistor with a dual-gate structure

Applied Physics Letters

Volumn 64, Issue 5, 1994, Pages 586-588

  Matsuoka, Hideyuki ^a   Ichiguchi, Tsuneo ^a   Yoshimura, Toshiyuki ^a   Takeda, Eiji ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002433791     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.111085     Document Type: Article

References (0)