Determination of InP HEMT Noise Parameters and S-Parameters to 60 GHz

IEEE Transactions on Microwave Theory and Techniques

Volumn 43, Issue 6, 1995, Pages 1216-1225

  Richard, T Webster ^a   Slobodnik, Andrew J ^b   Roberts, A George ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS PACKAGING; GAIN MEASUREMENT; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PARAMETER ESTIMATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE;

DESIGN PARAMETERS; MILLIMETER WAVE EXPERIMENTAL TECHNIQUE; NOISE FIGURE; NOISE PARAMETERS; PRECISION PACKAGES; SCATTERING PARAMETERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029321761     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.390174     Document Type: Article

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