GaAs MESFET Characterization Using Least Squares Approximation by Rational Functions

IEEE Transactions on Microwave Theory and Techniques

Volumn 41, Issue 2, 1993, Pages 199-205

  Nagatomo, Kazuo ^a   Daido, Yoshimasa ^a   Shimizu, Masahiko ^a   Okubo, Naofumi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LEAST SQUARES APPROXIMATIONS; MATRIX ALGEBRA; MICROWAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE;

RATIONAL FUNCTIONS;

MESFET DEVICES;

EID: 0027540382     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.216457     Document Type: Article

References (7)

1. H. A. Willing et al., “A technique for predicting large-signal performance of GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. 26, pp. 1017–1023, Dec. 1978.
2. W. R. Curtice and R. L. Camisa, “Self-consistent GaAs FET models for amplifier design and device diagnostics,” IEEE Trans. Microwave Theory, vol. 32, 1573–1578, Dec. 1984.
3. M. Berroth and R. Bosch, “Broad-band determination of the FET small-signal equivalent circuit,” IEEE Trans. Microwave Theory Tech., vol. 38, pp. 891–895, July 1990.
4. M. Berroth and R. Bosch, “High-frequency equivalent circuit of GaAs FET's for large-signal applications,” IEEE Trans. Microwave Theory Tech., vol. 39, pp. 224–229, Feb. 1991.
5. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “A new method for determining the FET small-signal equivalent circuit,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1151–1159, July 1988.
6. Hans-Olof Vickes, “Determination of intrinsic FET parameters using circuit partitioning approach,” IEEE Trans. Microwave Theory Tech., vol. 39, pp. 363–366, Feb. 1991.
7. R. Anholt and S. Swirhun, “Equivalent-circuit parameter extraction for cold GaAs MESFET's,” IEEE Trans. Microwave Theory Tech., vol. 39, pp. 1243–1247, July 1991.