High-Frequency Equivalent Circuit of Gaas Fet's for Large-Signal Applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 39, Issue 2, 1991, Pages 224-229

  Berroth, Manfred ^a   Bosch, Roland ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION--APPLICATIONS; ELECTRIC NETWORKS--EQUIVALENT CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS;

GATE CURRENT; HIGH FREQUENCY EQUIVALENT CIRCUIT; HOT MODELING; LARGE SIGNAL APPLICATIONS; PARAMETER EXTRACTION PROCEDURE; POSITIVELY BIASED TRANSISTORS;

TRANSISTORS, FIELD EFFECT;

EID: 0026103702     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.102964     Document Type: Article

References (7)

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2. W. R. Curtice and R. L. Camisa, “Self-consistent GaAs FET models for amplifier design and device diagnostics,” IEEE Trans. Microwave Theory Tech., vol. MTT-32, pp. 1573–1578, Dec. 1984.
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4. T.-H. Chen and M. Kumar, “Novel GaAs FET modelling technique for MMICs,” in 1988 GaAs 1C Symp. Tech. Dig. (Nashville), Nov. 1988, pp. 49–52.
5. R. A. Minasian, “Simplified GaAs MESFET model to 10 GHz,” Electron. Lett., vol. 13, no. 8, pp. 549–551, 1977.
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7. M. Berroth and R. Bosch, “Broad-band determination of the FET small-signal equivalent circuit,” IEEE Trans. Microwave Theory Tech., vol. 38, pp. 891–895, July 1990.