Current Saturation and Small-Signal Characteristics of GaAs Field-Effect Transistors

IEEE Transactions on Electron Devices

Volumn 20, Issue 3, 1973, Pages 213-220

  Hower, Philip L ^a   Bechtel, N George ^b  

^a WESTINGHOUSE ELECTRIC COMPANY   (United States)

^b FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT SATURATION; SMALL SIGNAL CHARACTERISTICS;

TRANSISTORS, FIELD EFFECT;

EID: 0015599920     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1973.17631     Document Type: Article

References (12)

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9. R. K. Willardson and Albert C. Beer, Ed., Semiconductors and Semimetals, vol. 7, Applications and Devices, Part A. New York: Academic, pp. 147–200, 1971.
10. N. G. Bechtel, W. W. Hooper, and R. D. Fairman, “High frequency gallium arsenide Schottky barrier gate field effect transistor,” Air Force Avionics Lab., Wright-Patterson AFB, Ohio, Tech. Rep. AFAL-7R-71-331, Nov. 1971.
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12. P. L. Hower, “A theory of saturation and a charge-control analysis of a junction field-effect transistor,” Stanford Electron. Lab., Stanford, Calif., Tech. Rep. 4726-1, Apr. 1967.