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Volumn 39, Issue 2, 1991, Pages 363-366

Determination of Intrinsic Fet Parameters Using Circuit Partitioning Approach

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVES; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

EID: 0026107986     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.102985     Document Type: Article
Times cited : (24)

References (14)
  • 1
    • 0021309245 scopus 로고
    • Uncertainty in the values of GaAs MESFET equivalent elements extracted from measured two-port scattering parameters
    • R. L. Vaitkus, “Uncertainty in the values of GaAs MESFET equivalent elements extracted from measured two-port scattering parameters,” in Proc. IEEE/Cornell Conf. High-Speed Semiconductor Devices and Circuits, 1983, pp. 301–308.
    • (1983) Proc. IEEE/Cornell Conf. High-Speed Semiconductor Devices and Circuits , pp. 301-308
    • Vaitkus, R.L.1
  • 2
    • 0020098535 scopus 로고
    • Microwave wide-band of GaAs dual-gate MESFET's
    • Mar
    • C. Tsironis and R. Meierer, “Microwave wide-band of GaAs dual-gate MESFET's”, IEEE Trans. Microwave Theory Tech., vol. MTT-30, pp. 243–251, Mar. 1982.
    • (1982) IEEE Trans. Microwave Theory Tech. , vol.MTT-30 , pp. 243-251
    • Tsironis, C.1    Meierer, R.2
  • 3
    • 0002648729 scopus 로고
    • An accurate FET modelling from measured S-parameters
    • (Baltimore, MD)
    • H. Kondoh, “An accurate FET modelling from measured S-parameters,” in IEEE MTT-S Int. Microwave Symp. Dig. (Baltimore, MD), 1986, pp. 377–380.
    • (1986) IEEE MTT-S Int. Microwave Symp. Dig , pp. 377-380
    • Kondoh, H.1
  • 4
    • 0009410088 scopus 로고
    • Microwave device modeling using efficient l1 optimization: A novel approach
    • Dec
    • J. W. Bandler, S. H. Chen, and S. Daijavad, “Microwave device modeling using efficient l1   optimization: A novel approach,” IEEE Trans. Microwave Theory Tech., vol. MTT-34, pp. 1282–1293, Dec. 1986.
    • (1986) IEEE Trans. Microwave Theory Tech. , vol.MTT-34 , pp. 1282-1293
    • Bandler, J.W.1    Chen, S.H.2    Daijavad, S.3
  • 5
    • 0023573847 scopus 로고
    • An automatic decomposition approach to optimization of large microwave systems
    • Dec
    • J. W. Bandler and Q.-J. Zhang, “An automatic decomposition approach to optimization of large microwave systems,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, pp. 1231–1239, Dec. 1987.
    • (1987) IEEE Trans. Microwave Theory Tech. , vol.MTT-35 , pp. 1231-1239
    • Bandler, J.W.1    Zhang, Q.-J.2
  • 6
    • 0023961710 scopus 로고
    • Circuit optimization: The state of the art
    • Feb
    • J. W. Bandler and S. H. Chen, “Circuit optimization: The state of the art,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 424–443, Feb. 1988.
    • (1988) IEEE Trans. Microwave Theory Tech. , vol.36 , pp. 424-443
    • Bandler, J.W.1    Chen, S.H.2
  • 8
    • 0024048518 scopus 로고
    • A new method for determining the FET small-signal equivalent circuit
    • July
    • G. Dambrine, A. Cappy, F. Helidore, and E. Playez, “A new method for determining the FET small-signal equivalent circuit,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1151–1159, July 1988.
    • (1988) IEEE Trans. Microwave Theory Tech. , vol.36 , pp. 1151-1159
    • Dambrine, G.1    Cappy, A.2    Helidore, F.3    Playez, E.4
  • 9
    • 0023962954 scopus 로고
    • A large-signal, analytical model for the GaAs MESFET
    • Feb
    • M. A. Khatibzadeh and R. J. Trew, “A large-signal, analytical model for the GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 231–238, Feb. 1988.
    • (1988) IEEE Trans. Microwave Theory Tech. , vol.36 , pp. 231-238
    • Khatibzadeh, M.A.1    Trew, R.J.2
  • 10
    • 0343533020 scopus 로고
    • Self-consistent GaAs models for amplifier design and device diagnostics
    • Dec
    • W. R. Curtice and R. L. Camisa, “Self-consistent GaAs models for amplifier design and device diagnostics,” IEEE Trans. Microwave Theory Tech., MTT-32, pp. 1573–1578, Dec. 1984.
    • (1984) IEEE Trans. Microwave Theory Tech. , vol.MTT-32 , pp. 1573-1578
    • Curtice, W.R.1    Camisa, R.L.2
  • 11
    • 0022810412 scopus 로고
    • High-frequency limits of millimeter wave transistors
    • M. B. Steer and R. J. Trew, “High-frequency limits of millimeter wave transistors,” IEEE Electron Device Lett., vol. EDL-7, pp. 640–642, 1986.
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , pp. 640-642
    • Steer, M.B.1    Trew, R.J.2
  • 12
    • 0024105550 scopus 로고
    • Note on unilateral power gain as applied to submicrometer transistors
    • H.-O. Vickes, “Note on unilateral power gain as applied to submicrometer transistors,” Electron. Lett., vol. 24, pp. 1503–1505, 1988.
    • (1988) Electron. Lett. , vol.24 , pp. 1503-1505
    • Vickes, H.-O.1
  • 13
    • 84941438884 scopus 로고
    • Comparison of the gain and frequency performance of compound field-effect transistors
    • Division of Network Theory Tech. Rep. TR 8805, Chalmers University of Technology, Gothenburg, Sweden, Dec
    • H.-O. Vickes, “Comparison of the gain and frequency performance of compound field-effect transistors,” Division of Network Theory Tech. Rep. TR 8805, Chalmers University of Technology, Gothenburg, Sweden, Dec. 1988.
    • (1988)
    • Vickes, H.-O.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.