Measurement and Analysis of Gaas Mesfet Parasitic Capacitances

IEEE Transactions on Microwave Theory and Techniques

Volumn 39, Issue 7, 1991, Pages 1247-1251

  Anholt, R ^a   Swirhun, S ^b  

^a Gateway Modeling Inc ^*  (United States)

^b HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE--ION IMPLANTATION; TRANSISTORS, FIELD EFFECT;

PARASITIC CAPACITANCES; POISSON SIMULATIONS; S-PARAMETERS;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026190496     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.85397     Document Type: Article

References (11)

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