A note on experimental determination of small-signal equivalent circuit of millimeter-wave FETs

IEEE Transactions on Microwave Theory and Techniques

Volumn 41, Issue 1, 1993, Pages 159-162

  Eskandarian, A ^a   Weinreb, S ^a  

^a Martin Marietta Laboratoriers/Gamma Monolithics ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; INDUCTANCE MEASUREMENT; MICROWAVE AMPLIFIERS; MILLIMETER WAVES;

ACTIVE/PASSIVE MEASUREMENT TECHNIQUE; MULTI-STAGE AMPLIFIERS; PARASITIC INDUCTANCES; SMALL-SIGNAL EQUIVALENT CIRCUIT;

FIELD EFFECT TRANSISTORS;

EID: 0027146985     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.210247     Document Type: Article

References (5)

1. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “A new method for determining The FET small-signal equivalent circuit,” IEEE Trans. Microwave Theory Tech., vol. 36, no. 7, pp. 1151-1159, July 1988.
2. M. Berroth and R. Bosch, “Broad-band determination of the FET small-signal equivalent circuit.” IEEE Trans. Microwave Theory Tech., vol. 38, no. 7, pp. 891-895, July 1990.
3. M. Berroth and R. Bosch, “High-frequency equivalent circuit of GaAs FET’s for large-signal applications,” IEEE Trans. Microwave Theory Tech., vol. 39, no. 2, pp. 224-229, Feb. 1991.
4. K. W. Lee, K. Lee, M. S. Shur, T. T. Vu, P. C. T. Roberts, and M. J. Helix, “Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET’s,” IEEE Trans. Electron Devices, vol. ED-32, no. 5, pp. 987-991, May 1985.
5. H. Vickes, “Determination of intrinsic FET parameters using circuit partitioning approach,” IEEE Trans. Microwave Theory Tech., vol. 39, no. 2, pp. 363-366, Feb. 1991.