Modelling Drain and Gate Dependence of HEMT 1-50 GHz, Small-Signal S-Parameters, and D.C. Drain Current

IEEE Transactions on Microwave Theory and Techniques

Volumn 43, Issue 1, 1995, Pages 213-216

  Mahon, Simon J ^a   Skellern, David J ^b  

^a CSIRO INDUSTRIAL PHYSICS   (Australia)

^b MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; EQUIVALENT CIRCUITS; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

GATE DRAIN CAPACITANCE; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; VARIABLE BOUNDARY ELECTRON TRANSPORT MODEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029208072     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.362988     Document Type: Article

References (6)

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