A Technique for Modelling S-Parameters for HEMT Structures as a Function of Gate Bias

IEEE Transactions on Microwave Theory and Techniques

Volumn 40, Issue 7, 1992, Pages 1430-1440

  Mahon, Simon J ^a   Skellem, David J ^a   Green, Frederick ^b  

^a MACQUARIE UNIVERSITY   (Australia)

^b CSIRO   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION--APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS;

GALLIUM ARSENIDE CHANNEL HEMT; GATE BIAS; HEMT WAFER STRUCTURES; PULSE-DOPED HEMT; S-PARAMETERS MODELLING; UNIFORMLY DOPED HEMT;

TRANSISTORS, HIGH ELECTRON MOBILITY;

EID: 0026891896     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.146324     Document Type: Article

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